Bernd Beschoten
Bernd Beschoten
Verified email at physik.rwth-aachen.de - Homepage
Title
Cited by
Cited by
Year
Electrical spin injection in a ferromagnetic semiconductor heterostructure
Y Ohno, DK Young, B Beschoten, F Matsukura, H Ohno, DD Awschalom
Nature 402 (6763), 790-792, 1999
30421999
Domain state model for exchange bias. I. Theory
U Nowak, KD Usadel, J Keller, P Miltényi, B Beschoten, G Güntherodt
Physical Review B 66 (1), 014430, 2002
5412002
Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper
L Banszerus, M Schmitz, S Engels, J Dauber, M Oellers, F Haupt, ...
Science Advances 1 (6), e1500222, 2015
5112015
Diluted antiferromagnets in exchange bias: Proof of the domain state model
P Miltényi, M Gierlings, J Keller, B Beschoten, G Güntherodt, U Nowak, ...
Physical Review Letters 84 (18), 4224, 2000
4792000
Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga 1− x Mn x) As
B Beschoten, PA Crowell, I Malajovich, DD Awschalom, F Matsukura, ...
Physical Review Letters 83 (15), 3073, 1999
3451999
Domain state model for exchange bias. II. Experiments
J Keller, P Miltényi, B Beschoten, G Güntherodt, U Nowak, KD Usadel
Physical Review B 66 (1), 014431, 2002
2912002
Raman spectroscopy as probe of nanometer-scale strain variations in graphene
C Neumann, S Reichardt, P Venezuela, M Drögeler, L Banszerus, ...
Nature Communications 6, 8429, 2014
2792014
Observation of long spin-relaxation times in bilayer graphene at room temperature
TY Yang, J Balakrishnan, F Volmer, A Avsar, M Jaiswal, J Samm, SR Ali, ...
Physical Review Letters 107 (4), 047206, 2011
2642011
Ballistic transport exceeding 28m in CVD grown graphene
L Banszerus, M Schmitz, S Engels, M Goldsche, K Watanabe, T Taniguchi, ...
Nano Letters 16 (2), 1387–1391, 2015
2392015
Origin of high-temperature ferromagnetism in (Ga, Mn) N layers grown on 4H–SiC (0001) by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, L Däweritz, KJ Friedland, KH Ploog, ...
Applied Physics Letters 82 (13), 2077-2079, 2003
2382003
Spin coherence and dephasing in GaN
B Beschoten, E Johnston-Halperin, DK Young, M Poggio, JE Grimaldi, ...
Physical Review B 63 (12), 121202, 2001
2332001
Towards wafer scale fabrication of graphene based spin valve devices
A Avsar, TY Yang, SK Bae, J Balakrishnan, F Volmer, M Jaiswal, Z Yi, ...
Nano Letters 11 (6), 2363–2368, 2011
2152011
Graphene spintronics: the European Flagship perspective
S Roche, J Ĺkerman, B Beschoten, JC Charlier, M Chshiev, SP Dash, ...
2D Materials 2 (3), 030202, 2015
1802015
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten
Physical Review B 72 (24), 245203, 2005
1632005
Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
M Drögeler, C Franzen, F Volmer, T Pohlmann, L Banszerus, M Wolter, ...
Nano Letters 16 (6), 3533, 2016
1512016
Nanosecond spin lifetimes in single-and few-layer graphene–hBN heterostructures at room temperature
M Drögeler, F Volmer, M Wolter, B Terrés, K Watanabe, T Taniguchi, ...
Nano Letters 14 (11), 6050-6055, 2014
1412014
Scaling behavior at the insulator-metal transition in Bi 2 Sr 2 (Ca z R 1− z) Cu 2 O 8+ y where R is a rare-earth element
C Quitmann, D Andrich, C Jarchow, M Fleuster, B Beschoten, ...
Physical Review B 46 (18), 11813, 1992
1211992
Perpendicular exchange bias in antiferromagnetic-ferromagnetic nanostructures
J Sort, B Dieny, M Fraune, C Koenig, F Lunnebach, B Beschoten, ...
Applied Physics Letters 84 (18), 3696-3698, 2004
912004
Role of MgO barriers for spin and charge transport in Co/MgO/graphene nonlocal spin-valve devices
F Volmer, M Drögeler, E Maynicke, N Von Den Driesch, ML Boschen, ...
Physical Review B 88 (16), 161405, 2013
852013
Identifying suitable substrates for high-quality graphene-based heterostructures
L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ...
2D Materials 4 (2), 025030, 2017
532017
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