| Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015 | 93 | 2015 |
| Modulation of over 1014 cm− 2 electrons in SrTiO3/GdTiO3 heterostructures M Boucherit, O Shoron, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ... Applied Physics Letters 104 (18), 2014 | 58 | 2014 |
| Two-dimensional Dirac fermions in thin films of L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ... Physical Review B 97 (11), 115132, 2018 | 50 | 2018 |
| BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors OF Shoron, S Raghavan, CR Freeze, S Stemmer Applied Physics Letters 110 (23), 2017 | 44 | 2017 |
| Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan Applied Physics Letters 102 (24), 2013 | 44 | 2013 |
| Probing the Metal-Insulator Transition in by Electrostatic Doping S Raghavan, JY Zhang, OF Shoron, S Stemmer Physical Review Letters 117 (3), 037602, 2016 | 42 | 2016 |
| Topological materials for functional optoelectronic devices H Chorsi, B Cheng, B Zhao, J Toudert, V Asadchy, OF Shoron, S Fan, ... Advanced Functional Materials 32 (19), 2110655, 2022 | 31 | 2022 |
| Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3 K Ahadi, OF Shoron, PB Marshall, E Mikheev, S Stemmer Applied Physics Letters 110 (6), 2017 | 28 | 2017 |
| Electron velocity of 6× 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors S Arulkumaran, GI Ng, M Kumar, K Ranjan, KL Teo, OF Shoron, S Rajan, ... Applied Physics Letters 106 (5), 2015 | 22 | 2015 |
| In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V S Arulkumaran, GI Ng, CM Manojkumar, K Ranjan, KL Teo, OF Shoron, ... 2014 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2014 | 22 | 2014 |
| Prospects of terahertz transistors with the topological semimetal cadmium arsenide OF Shoron, M Goyal, B Guo, DA Kealhofer, T Schumann, S Stemmer Advanced Electronic Materials 6 (10), 2000676, 2020 | 18 | 2020 |
| Nanoscale etching of perovskite oxides for field effect transistor applications J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ... Journal of Vacuum Science & Technology B 38 (1), 2020 | 18 | 2020 |
| Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide OF Shoron, T Schumann, M Goyal, DA Kealhofer, S Stemmer Applied Physics Letters 115 (6), 2019 | 18 | 2019 |
| High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors J Cheng, C Wang, C Freeze, O Shoron, N Combs, H Yang, NK Kalarickal, ... IEEE Electron Device Letters 41 (4), 621-624, 2020 | 16 | 2020 |
| Electronic transport of titanate heterostructures and their potential as channels on (001) Si L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker Journal of Applied Physics 118 (10), 2015 | 15 | 2015 |
| Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance OF Shoron, DA Kealhofer, M Goyal, T Schumann, AA Burkov, S Stemmer Applied Physics Letters 119 (17), 2021 | 8 | 2021 |
| A simple physically based model of temperature effect on drain current for nanoscale TFET OF Shoron, SA Siddiqui, A Zubair, QDM Khosru 2010 IEEE International Conference of Electron Devices and Solid-State …, 2010 | 6 | 2010 |
| Impact of bandgap and effective mass on the transport characteristics of tunneling FET A Zubair, SA Siddiqui, OF Shoron, QDM Khosru 2010 IEEE Nanotechnology Materials and Devices Conference, 47-51, 2010 | 4 | 2010 |
| Modulation of over 1014cm−2electrons at the SrTiO3/GdTiO3 heterojunction O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ... 72nd Device Research Conference, 13-14, 2014 | 3 | 2014 |
| Topological Semimetals for Electronic Devices A Rashidi, OF Shoron, M Goyal, DA Kealhofer, S Stemmer 2021 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2021 | 2 | 2021 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
