Omor Shoron
Omor Shoron
Software Reaserch Engineer (Compact Device Modeling), Intel Corporation
Verified email at - Homepage
Cited by
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Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
Applied Physics Letters 107 (15), 2015
Modulation of over 1014 cm− 2 electrons in SrTiO3/GdTiO3 heterostructures
M Boucherit, O Shoron, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...
Applied Physics Letters 104 (18), 2014
Two-dimensional Dirac fermions in thin films of
L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ...
Physical Review B 97 (11), 115132, 2018
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan
Applied Physics Letters 102 (24), 2013
BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors
OF Shoron, S Raghavan, CR Freeze, S Stemmer
Applied Physics Letters 110 (23), 2017
Probing the Metal-Insulator Transition in by Electrostatic Doping
S Raghavan, JY Zhang, OF Shoron, S Stemmer
Physical Review Letters 117 (3), 037602, 2016
Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3
K Ahadi, OF Shoron, PB Marshall, E Mikheev, S Stemmer
Applied Physics Letters 110 (6), 2017
In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
S Arulkumaran, GI Ng, CM Manojkumar, K Ranjan, KL Teo, OF Shoron, ...
2014 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2014
Electron velocity of 6× 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors
S Arulkumaran, GI Ng, M Kumar, K Ranjan, KL Teo, OF Shoron, S Rajan, ...
Applied Physics Letters 106 (5), 2015
Topological materials for functional optoelectronic devices
H Chorsi, B Cheng, B Zhao, J Toudert, V Asadchy, OF Shoron, S Fan, ...
Advanced Functional Materials 32 (19), 2110655, 2022
Prospects of terahertz transistors with the topological semimetal cadmium arsenide
OF Shoron, M Goyal, B Guo, DA Kealhofer, T Schumann, S Stemmer
Advanced Electronic Materials 6 (10), 2000676, 2020
High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors
J Cheng, C Wang, C Freeze, O Shoron, N Combs, H Yang, NK Kalarickal, ...
IEEE Electron Device Letters 41 (4), 621-624, 2020
Electronic transport of titanate heterostructures and their potential as channels on (001) Si
L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker
Journal of Applied Physics 118 (10), 2015
Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide
OF Shoron, T Schumann, M Goyal, DA Kealhofer, S Stemmer
Applied Physics Letters 115 (6), 2019
Nanoscale etching of perovskite oxides for field effect transistor applications
J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ...
Journal of Vacuum Science & Technology B 38 (1), 2020
Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance
OF Shoron, DA Kealhofer, M Goyal, T Schumann, AA Burkov, S Stemmer
Applied Physics Letters 119 (17), 2021
A simple physically based model of temperature effect on drain current for nanoscale TFET
OF Shoron, SA Siddiqui, A Zubair, QDM Khosru
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010
Impact of bandgap and effective mass on the transport characteristics of tunneling FET
A Zubair, SA Siddiqui, OF Shoron, QDM Khosru
2010 IEEE Nanotechnology Materials and Devices Conference, 47-51, 2010
Modulation of over 1014cm−2electrons at the SrTiO3/GdTiO3 heterojunction
O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...
72nd Device Research Conference, 13-14, 2014
SrTiO3/GdTiO3heterostructure field effect transistors
OF Shoron, M Boucherit, CA Jackson, P Moetakef, S Stemmer, S Rajan
71st Device Research Conference, 205-206, 2013
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