| The role of macrophage phenotype in vascularization of tissue engineering scaffolds KL Spiller, RR Anfang, KJ Spiller, J Ng, KR Nakazawa, JW Daulton, ... Biomaterials 35 (15), 4477-4488, 2014 | 906 | 2014 |
| 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ... Applied Physics Letters 114 (20), 2019 | 21 | 2019 |
| NMOS/SiGe resonant interband tunneling diode static random access memory S Sudirgo, DJ Pawlik, SK Kurinec, PE Thompson, JW Daulton, SY Park, ... 2006 64th Device Research Conference, 265-266, 2006 | 18 | 2006 |
| Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications SY Chung, SY Park, JW Daulton, R Yu, PR Berger, PE Thompson Solid-state electronics 50 (6), 973-978, 2006 | 17 | 2006 |
| Integration of quantum cascade lasers and passive waveguides J Montoya, C Wang, A Goyal, K Creedon, M Connors, J Daulton, ... Applied physics letters 107 (3), 2015 | 15 | 2015 |
| InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration S Warnock, CL Chen, J Knechtl, R Molnar, DR Yost, M Cook, C Stull, ... 2020 IEEE/MTT-S International Microwave Symposium (IMS), 289-292, 2020 | 14 | 2020 |
| Controlling the carrier density of surface conductive diamond MW Geis, MA Hollis, GW Turner, J Daulton, JO Varghese, K Klyukin, ... Diamond and Related Materials 122, 108775, 2022 | 8 | 2022 |
| Hydrogen and deuterium termination of diamond for low surface resistance and surface step control MW Geis, JO Varghese, A Vardi, J Kedzierski, J Daulton, D Calawa, ... Diamond and Related Materials 118, 108518, 2021 | 6 | 2021 |
| Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire DF Storm, TA Growden, EM Cornuelle, PR Peri, T Osadchy, JW Daulton, ... Journal of Vacuum Science & Technology B 38 (3), 2020 | 6 | 2020 |
| III-nitride vertical hot electron transistor with polarization doping and collimated injection JW Daulton, RJ Molnar, JA Brinkerhoff, MA Hollis, A Zaslavsky Applied Physics Letters 121 (22), 2022 | 4 | 2022 |
| GaN hot electron transistors: From ballistic to coherent JW Daulton, RJ Molnar, JA Brinkerhoff, ZC Adamson, MA Hollis, ... Solid-State Electronics 208, 108741, 2023 | 1 | 2023 |
| Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors JW Daulton, RJ Molnar, JA Brinkerhoff, TJ Weir, MA Hollis, A Zaslavsky Applied Physics Letters 124 (6), 2024 | | 2024 |
| Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, LM Whitaker, BP Downey, ... 2019 Device Research Conference (DRC), 145-146, 2019 | | 2019 |
| Monolithic integration of quantum cascade lasers and passive components J Montoya, C Wang, A Goyal, K Creedon, M Connors, J Daulton, ... CLEO: Science and Innovations, STu4G. 7, 2015 | | 2015 |
| Monolithic Si/SiGe HBT-RITD Circuit with Controllable Negative Differential Resistance for Voltage Controlled Oscillator Applications SY Chung, SY Park, JW Daulton, R Yu, PR Berger, PE Thompson 2005 International Semiconductor Device Research Symposium, 155-156, 2005 | | 2005 |
| OH 45435, USA TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ... | | |
| Cayrefourcq A Chini, J Chiu, E Cho, JD Choe, B Choi, C Choi, E Chor, C Cleavelin, ... | | |
