Ming Xu

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Coauteurs

Songyou WangDepartment of Optical Science and Engineering,Fudan universityAdresse e-mail validée de fudan.edu.cn
Ma, EvanProfessor of Materials Science and Engineering (retired from JHU, currently at XJTU)Adresse e-mail validée de xjtu.edu.cn
Kan-Hao Xue (薛堪豪)Huazhong University of Science and TechnologyAdresse e-mail validée de hust.edu.cn
Yongqiang ChengORNLAdresse e-mail validée de ornl.gov
Yi LiAssociate Professor, Huazhong University of Science and Technology, ChinaAdresse e-mail validée de hust.edu.cn
Matthias WuttigProfessor für Physik, RWTH AachenAdresse e-mail validée de physik.rwth-aachen.de
Wei ZhangProfessor, Xi'an Jiaotong UniversityAdresse e-mail validée de mail.xjtu.edu.cn
Riccardo MazzarelloSapienza UniversityAdresse e-mail validée de uniroma1.it
Xiaodong HanBeijing University of TechnologyAdresse e-mail validée de bjut.edu.cn
Howard ShengAssociate Professor of PhysicsAdresse e-mail validée de gmu.edu
Min Zhu (朱敏）Professor, Shanghai Institute of Microsystem and Information TechnologyAdresse e-mail validée de mail.sim.ac.cn
Xian-Bin Li (李贤斌)Professor, DEE, Jilin University (吉林大学)Adresse e-mail validée de jlu.edu.cn
Jun Ding (丁俊)Professor, Xi'an Jiaotong University; Prev: Berkeley Lab; JHUAdresse e-mail validée de lbl.gov
Wenge YangCenter for High Pressure Science and Technology Advanced ResearchAdresse e-mail validée de hpstar.ac.cn
SB Zhang (Shengbai Zhang)Rensselaer Polytechnic InstituteAdresse e-mail validée de rpi.edu
Martin SalingaUniversity of MünsterAdresse e-mail validée de uni-muenster.de
Da-Shan ShangInstitute of Microelectronics, Chinese Academy of SciencesAdresse e-mail validée de ime.ac.cn
Hsien-Yen ChangDirector, Real World Research, Real World Value & Evidence, Janssen Scientific AffairsAdresse e-mail validée de its.jnj.com
Kelvin Xie (谢昱玄)Assistant Professor, Department of Materials Science and Engineering, Texas A&M UniversityAdresse e-mail validée de tamu.edu
Pengfei GuanProfessor, PI, Beijing Computational Science Research CenterAdresse e-mail validée de csrc.ac.cn

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Ming Xu

Huazhong University of Sci & Tech

Aucune adresse e-mail validée

Memory materials and devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Mechanisms of Li+ transport in garnet-type cubic Li 3+ x La 3 M 2 O 12 (M= Te, Nb, Zr) M Xu, MS Park, JM Lee, TY Kim, YS Park, E Ma Physical Review B 85 (5), 052301, 2012	210	2012
Recent advances on neuromorphic devices based on chalcogenide phase‐change materials M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao Advanced Functional Materials 30 (50), 2003419, 2020	173	2020
Nature of atomic bonding and atomic structure in the phase-change Ge 2 Sb 2 Te 5 glass M Xu, YQ Cheng, HW Sheng, E Ma Physical review letters 103 (19), 195502, 2009	168	2009
Optical properties of cubic Ti3N4, Zr3N4, and Hf3N4 M Xu, S Wang, G Yin, J Li, Y Zheng, L Chen, Y Jia Applied physics letters 89 (15), 2006	132	2006
Experimental and ab initio molecular dynamics simulation studies of liquid Al 60 Cu 40 alloy SY Wang, MJ Kramer, M Xu, S Wu, SG Hao, DJ Sordelet, KM Ho, ... Physical Review B 79 (14), 144205, 2009	125	2009
One-dimensional stringlike cooperative migration of lithium ions in an ultrafast ionic conductor M Xu, J Ding, E Ma Applied Physics Letters 101 (3), 2012	101	2012
New Structural Picture of the Ge_ {2} Sb_ {2} Te_ {5} Phase-Change Alloy XQ Liu, XB Li, L Zhang, YQ Cheng, ZG Yan, M Xu, XD Han, SB Zhang, ... Physical Review Letters 106 (2), 25501, 2011	88	2011
Metavalent bonding in crystalline solids: how does it collapse? L Guarneri, S Jakobs, A von Hoegen, S Maier, M Xu, M Zhu, S Wahl, ... Advanced Materials 33 (39), 2102356, 2021	81	2021
GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides JH Yuan, Q Chen, LRC Fonseca, M Xu, KH Xue, XS Miao Journal of Physics Communications 2 (10), 105005, 2018	80	2018
How fragility makes phase-change data storage robust: insights from ab initio simulations W Zhang, I Ronneberger, P Zalden, M Xu, M Salinga, M Wuttig, ... Scientific reports 4 (1), 6529, 2014	79	2014
Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy M Xu, YQ Cheng, L Wang, HW Sheng, Y Meng, WG Yang, XD Han, E Ma Proceedings of the National Academy of Sciences 109 (18), E1055-E1062, 2012	69	2012
Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe₂ for In‐Memory Computing L Liu, Y Li, X Huang, J Chen, Z Yang, KH Xue, M Xu, H Chen, P Zhou, ... Advanced Science 8 (15), 2005038, 2021	55	2021
KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism YQ Song, JH Yuan, LH Li, M Xu, JF Wang, KH Xue, XS Miao Nanoscale 11 (3), 1131-1139, 2019	55	2019
“Stickier”-Surface Sb₂Te₃ Templates Enable Fast Memory Switching of Phase Change Material GeSb₂Te₄ with Growth-Dominated Crystallization J Feng, A Lotnyk, H Bryja, X Wang, M Xu, Q Lin, X Cheng, M Xu, H Tong, ... ACS Applied Materials & Interfaces 12 (29), 33397-33407, 2020	52	2020
Temperature effects on atomic pair distribution functions of melts J Ding, M Xu, PF Guan, SW Deng, YQ Cheng, E Ma The Journal of chemical physics 140 (6), 2014	51	2014
Direct observation of partial disorder and zipperlike transition in crystalline phase change materials M Zhu, K Ren, L Liu, S Lv, X Miao, M Xu, Z Song Physical Review Materials 3 (3), 033603, 2019	48	2019
Electronic and optical properties of noble metal oxides M2O (M= Cu, Ag and Au): first-principles study F Pei, S Wu, G Wang, M Xu, SY Wang, LY Chen, Y Jia Journal of the Korean Physical Society 55 (3), 1243-1249, 2009	48	2009
Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing HY Li, XD Huang, JH Yuan, YF Lu, TQ Wan, Y Li, KH Xue, YH He, M Xu, ... Advanced Electronic Materials 6 (8), 2000309, 2020	46	2020
Disorder Control in Crystalline GeSb₂Te₄ Using High Pressure M Xu, W Zhang, R Mazzarello, M Wuttig Advanced Science 2 (8), 1500117, 2015	42	2015
Resistance Drift Suppression Utilizing GeTe/Sb₂Te₃ Superlattice‐Like Phase‐Change Materials L Zhou, Z Yang, X Wang, H Qian, M Xu, X Cheng, H Tong, X Miao Advanced Electronic Materials 6 (1), 1900781, 2020	41	2020

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