Confinement of CdSe nanoparticles inside MCM‐41 H Parala, H Winkler, M Kolbe, A Wohlfart, RA Fischer, R Schmechel, ... Advanced Materials 12 (14), 1050-1055, 2000 | 200 | 2000 |
Chemical vapour deposition: precursors, processes and applications M Ritala, H Parala, R Kanjolia, RD Dupuis, SE Alexandrov, SJC Irvine, ... Royal Society of Chemistry, 2008 | 126 | 2008 |
Synthesis of nano-scale TiO 2 particles by a nonhydrolytic approach H Parala, A Devi, R Bhakta, RA Fischer Journal of Materials Chemistry 12 (6), 1625-1627, 2002 | 96 | 2002 |
MOCVD‐Loading of Mesoporous Siliceous Matrices with Cu/ZnO: Supported Catalysts for Methanol Synthesis R Becker, H Parala, F Hipler, OP Tkachenko, KV Klementiev, W Grünert, ... Angewandte Chemie International Edition 43 (21), 2839-2842, 2004 | 83 | 2004 |
Investigations on InN whiskers grown by chemical vapour deposition H Parala, A Devi, F Hipler, E Maile, A Birkner, HW Becker, RA Fischer Journal of crystal growth 231 (1-2), 68-74, 2001 | 74 | 2001 |
Electrical and optical properties of TiO2 thin films prepared by plasma‐enhanced atomic layer deposition VS Dang, H Parala, JH Kim, K Xu, NB Srinivasan, E Edengeiser, ... physica status solidi (a) 211 (2), 416-424, 2014 | 61 | 2014 |
Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties K Xu, R Ranjith, A Laha, H Parala, AP Milanov, RA Fischer, E Bugiel, ... Chemistry of Materials 24 (4), 651-658, 2012 | 55 | 2012 |
Sc 2 O 3, Er 2 O 3, and Y 2 O 3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors AP Milanov, K Xu, S Cwik, H Parala, T de los Arcos, HW Becker, ... Dalton Transactions 41 (45), 13936-13947, 2012 | 52 | 2012 |
Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors AP Milanov, T Toader, H Parala, D Barreca, A Gasparotto, C Bock, ... Chemistry of Materials 21 (22), 5443-5455, 2009 | 51 | 2009 |
Nano-brass colloids: synthesis by co-hydrogenolysis of [CpCu (PMe 3)] with [ZnCp* 2] and investigation of the oxidation behaviour of α/β-CuZn nanoparticles M Cokoja, H Parala, MK Schröter, A Birkner, MWE van den Berg, ... Journal of Materials Chemistry 16 (25), 2420-2428, 2006 | 51 | 2006 |
Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition AP Milanov, K Xu, A Laha, E Bugiel, R Ranjith, D Schwendt, HJ Osten, ... Journal of the American Chemical Society 132 (1), 36-37, 2010 | 50 | 2010 |
Nanometallurgy of Colloidal Aluminides: Soft Chemical Synthesis of CuAl2 and α/β-CuAl Colloids by Co-Hydrogenolysis of (AlCp*)4 with [CpCu(PMe3)] M Cokoja, H Parala, MK Schröter, A Birkner, MWE van den Berg, ... Chemistry of Materials 18 (6), 1634-1642, 2006 | 48 | 2006 |
Indium-tris-guanidinates: a promising class of precursors for water assisted atomic layer deposition of In 2 O 3 thin films M Gebhard, M Hellwig, H Parala, K Xu, M Winter, A Devi Dalton Transactions 43 (3), 937-940, 2014 | 47 | 2014 |
Mixed amido/imido/guanidinato complexes of niobium: potential precursors for MOCVD of niobium nitride thin films A Baunemann, D Bekermann, TB Thiede, H Parala, M Winter, C Gemel, ... Dalton Transactions, 3715-3722, 2008 | 46 | 2008 |
New tungsten (VI) guanidinato complexes: Synthesis, characterization, and application in metal− organic chemical vapor deposition of tungsten nitride thin films D Rische, H Parala, E Gemel, M Winter, RA Fischer Chemistry of materials 18 (25), 6075-6082, 2006 | 40 | 2006 |
Intrinsic Nitrogen‐doped CVD‐grown TiO2 Thin Films from All‐N‐coordinated Ti Precursors for Photoelectrochemical Applications SJ Kim, K Xu, H Parala, R Beranek, M Bledowski, K Sliozberg, HW Becker, ... Chemical Vapor Deposition 19 (1‐3), 45-52, 2013 | 39 | 2013 |
Organometallic Synthesis of Colloidal α-/β-NiAl Nanoparticles and Selective Aluminum Oxidation in α-Ni1-xAlx Nanoalloys M Cokoja, H Parala, A Birkner, O Shekhah, MWE van den Berg, ... Chemistry of Materials 19 (23), 5721-5733, 2007 | 31 | 2007 |
Guanidinato-based precursors for MOCVD of metal nitrides (MxN: M= Ta, W) D Rische, H Parala, A Baunemann, T Thiede, R Fischer Surface and Coatings Technology 201 (22-23), 9125-9130, 2007 | 27 | 2007 |
MOCVD of gallium nitride nanostructures using (N 3) 2 Ga {(CH 2) 3 NR 2}, R= Me, Et, as a single molecule precursor: morphology control and materials characterization J Khanderi, A Wohlfart, H Parala, A Devi, J Hambrock, A Birkner, ... Journal of Materials Chemistry 13 (6), 1438-1446, 2003 | 27 | 2003 |
MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications M Lemberger, S Thiemann, A Baunemann, H Parala, RA Fischer, J Hinz, ... Surface and Coatings Technology 201 (22-23), 9154-9158, 2007 | 25 | 2007 |