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Michael Moseley
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Vertical GaN power diodes with a bilayer edge termination
JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
1232015
Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
B Gunning, J Lowder, M Moseley, W Alan Doolittle
Applied Physics Letters 101 (8), 2012
1002012
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 2015
982015
Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN
G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look
Applied Physics Letters 93 (17), 2008
962008
High voltage and high current density vertical GaN power diodes
AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
932016
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 2018
842018
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 2016
772016
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 2017
742017
Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
M Moseley, J Lowder, D Billingsley, WA Doolittle
Applied Physics Letters 97 (19), 2010
672010
Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes
M Moseley, A Allerman, M Crawford, JJ Wierer, M Smith, L Biedermann
Journal of Applied Physics 116 (5), 2014
592014
Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle
Applied Physics Letters 103 (13), 2013
572013
Transient atomic behavior and surface kinetics of GaN
M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle
Journal of Applied Physics 106 (1), 2009
542009
Observation and control of the surface kinetics of InGaN for the elimination of phase separation
M Moseley, B Gunning, J Greenlee, J Lowder, G Namkoong, ...
Journal of Applied Physics 112 (1), 2012
522012
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ...
Applied Physics Letters 111 (5), 2017
502017
Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
JJ Wierer, AA Allerman, I Montaņo, MW Moseley
Applied Physics Letters 105 (6), 2014
452014
Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (19), 2016
422016
Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
MW Moseley, AA Allerman, MH Crawford, JJ Wierer, ML Smith, ...
Journal of Applied Physics 117 (9), 2015
412015
Comparison of interfacial and bulk ionic motion in analog memristors
JD Greenlee, WL Calley, MW Moseley, WA Doolittle
IEEE Transactions on Electron Devices 60 (1), 427-432, 2012
412012
Extremely high hole concentrations in c‐plane GaN
E Trybus, WA Doolittle, M Moseley, W Henderson, D Billingsley, ...
physica status solidi c 6 (S2 2), S788-S791, 2009
392009
Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
Y Zhang, AA Allerman, S Krishnamoorthy, F Akyol, MW Moseley, ...
Applied Physics Express 9 (5), 052102, 2016
382016
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