| Study of graded aluminium oxide films prepared by metal-organic chemical vapour deposition C Dhanavantri, RN Karekar, VJ Rao Thin Solid Films 127 (1-2), 85-92, 1985 | 31 | 1985 |
| Graphene, conducting polymer and their composites as transparent and current spreading electrode in GaN solar cells P Mahala, A Kumar, S Nayak, S Behura, C Dhanavantri, O Jani Superlattices and Microstructures 92, 366-373, 2016 | 21 | 2016 |
| Enhancement of light extraction efficiency of vertical LED with patterned graphene as current spreading layer S Singh, ADS Nandini, S Pal, C Dhanavantri Superlattices and Microstructures 89, 89-96, 2016 | 18 | 2016 |
| Optimization of p-GaN/InGaN/n-GaN double heterojunction pin solar cell for high efficiency: simulation approach AS Kushwaha, P Mahala, C Dhanavantri International Journal of Photoenergy 2014, 2014 | 18 | 2014 |
| Metal/InGaN Schottky junction solar cells: an analytical approach P Mahala, SK Behura, C Dhanavantri, A Ray, O Jani Applied Physics A 118, 1459-1468, 2015 | 17 | 2015 |
| Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications BC Joshi, M Mathew, BC Joshi, D Kumar, C Dhanavantri Pramana 74, 135-141, 2010 | 17 | 2010 |
| Sapphire, SiC, AlN, Si and diamond-substrate material for GaN HENT and LED BC Joshi, C Dhanavantri, D Kumar Journal of Optoelectronics and Advanced Materials 11 (8), 1111, 2009 | 16 | 2009 |
| Realization of long-period corrugated grating in silica-on-silicon-based channel waveguide S Pal, A Chauhan, M Singh, P Kumar, M Sharma, N Pradhan, K Singh, ... IEEE Photonics Technology Letters 21 (20), 1490-1492, 2009 | 14 | 2009 |
| Realization of long-period corrugated grating in silica-on-silicon-based channel waveguide S Pal, A Chauhan, M Singh, P Kumar, M Sharma, N Pradhan, K Singh, ... IEEE Photonics Technology Letters 21 (20), 1490-1492, 2009 | 14 | 2009 |
| Tunable and wavelength selective pin photodiode H Halbritter, F Riemenschneider, S Syguda, C Dhanavantri, M Strassner, ... Electronics Letters 40 (6), 1, 2004 | 12 | 2004 |
| Design and comparative study of lateral and vertical LEDs with graphene as current spreading layer S Palakurthy, S Singh, S Pal, C Dhanavantri Superlattices and Microstructures 86, 86-94, 2015 | 11 | 2015 |
| A study on the 2D simulation of Pt/InGaN/GaN/metal Schottky junction solar cell P Mahala, SK Behura, AS Kushwaha, A Ray, O Jani, C Dhanavantri Semiconductor science and technology 28 (5), 055012, 2013 | 11 | 2013 |
| Theoretical study on the effect of graded InyGa1−yN layer on p‐GaN/InyGa1−yN/n‐GaN p–i–n solar cell P Mahala, A Ray, O Jani, C Dhanavantri physica status solidi (a) 210 (12), 2656-2661, 2013 | 10 | 2013 |
| Silica-on-Silicon based 1× N optical splitter: Design, Fabrication and Characterization A Baby, C Dhanavantri, JP Pachauri, S Johri, P Kumar, BR Singh Indian J Eng Mater Sci 12, 12-16, 2005 | 10 | 2005 |
| Preparation of graded-index thin films with specific index profile by metal-organic chemical vapour deposition C Dhanavantri, RN Karekar Thin Solid Films 169 (2), 271-279, 1989 | 10 | 1989 |
| Performances of p-side down vertical InGaN/GaN blue light-emitting diodes with chip size S Singh, S Kumar, S Pal, C Dhanavantri Optics & Laser Technology 95, 165-171, 2017 | 9 | 2017 |
| Optimization of n‐electrode pattern for p‐side down vertical InGaN/GaN blue light emitting diodes S Kumar, S Singh, AK Lunia, S Pal, C Dhanavantri physica status solidi (a) 211 (9), 2134-2141, 2014 | 9 | 2014 |
| Optimization towards reduction of efficiency droop in blue GaN/InGaN based light emitting diodes S Singh, NK Rohila, S Pal, C Dhanavantri Optik 123 (14), 1287-1292, 2012 | 9 | 2012 |
| Effect of electron blocking layer on efficiency droop in blue InGaN/GaN based light-emitting diodes S Singh, D Robidas, N Rohila, S Pal, C Dhanavantri Optoelectronics and Advanced Materials-Rapid Communications 4 (23), 1106-1110, 2010 | 9 | 2010 |
| Microstrip losses with Al2O3 overlay KK Joshi, C Dhanavantri, SA Gangal, RN Karekar Bulletin of Materials Science 8, 535-539, 1986 | 9 | 1986 |
