| Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha ACS nano 10 (2), 2128-2137, 2016 | 403 | 2016 |
| Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017 | 336 | 2017 |
| Schottky barrier heights for Au and Pd contacts to MoS2 N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ... Applied Physics Letters 105 (11), 2014 | 299 | 2014 |
| High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors P Packan, S Akbar, M Armstrong, D Bergstrom, M Brazier, H Deshpande, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 294 | 2009 |
| A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2SRAM cell size in a 291Mb array S Natarajan, M Armstrong, M Bost, R Brain, M Brazier, CH Chang, ... 2008 IEEE International Electron Devices Meeting, 1-3, 2008 | 288 | 2008 |
| Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, N Medhekar, S Ghosh, ... Nano Letters 20 (3), 1707-1717, 2020 | 205 | 2020 |
| Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan Applied physics letters 112 (23), 2018 | 187 | 2018 |
| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 171 | 2019 |
| Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018 | 168 | 2018 |
| Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018 | 158 | 2018 |
| Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2 N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha ACS applied materials & interfaces 8 (1), 256-263, 2016 | 153 | 2016 |
| Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ... Applied Physics Letters 101 (18), 2012 | 137 | 2012 |
| Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts S Gupta, P Paramahans Manik, R Kesh Mishra, A Nainani, MC Abraham, ... Journal of Applied Physics 113 (23), 2013 | 125 | 2013 |
| Optoelectronic and photonic devices based on transition metal dichalcogenides K Thakar, S Lodha Materials Research Express 7 (1), 014002, 2020 | 124 | 2020 |
| Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 1042-1045, 2018 | 115 | 2018 |
| Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ... IEEE Electron Device Letters 33 (10), 1396-1398, 2012 | 115 | 2012 |
| Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan IEEE Electron Device Letters 40 (8), 1241-1244, 2019 | 114 | 2019 |
| Reversible hysteresis inversion in MoS2 field effect transistors N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ... npj 2D Materials and Applications 1 (1), 34, 2017 | 112 | 2017 |
| Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha ACS applied materials & interfaces 10 (42), 36512-36522, 2018 | 102 | 2018 |
| Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction S Ghosh, A Varghese, K Thakar, S Dhara, S Lodha Nature communications 12 (1), 3336, 2021 | 97 | 2021 |
Chandan JoishiResearch Scientist, The Ohio State UniversityVerified email at osu.edu
