| Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage Y Kitabayashi, T Kudo, H Tsuboi, T Yamada, D Xu, M Shibata, ... IEEE Electron Device Letters 38 (3), 363-366, 2017 | 172 | 2017 |
| Durability-enhanced two-dimensional hole gas of CH diamond surface for complementary power inverter applications H Kawarada, T Yamada, D Xu, H Tsuboi, Y Kitabayashi, D Matsumura, ... Scientific reports 7 (1), 42368, 2017 | 112 | 2017 |
| Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification H Yamano, S Kawai, K Kato, T Kageura, M Inaba, T Okada, I Higashimata, ... Japanese journal of applied physics 56 (4S), 04CK08, 2017 | 66 | 2017 |
| Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors N Oi, M Inaba, S Okubo, I Tsuyuzaki, T Kageura, S Onoda, A Hiraiwa, ... Scientific reports 8 (1), 10660, 2018 | 55 | 2018 |
| Effect of mixing ratio on NO2 gas sensor response with SnO2-decorated carbon nanotube channels fabricated by one-step dielectrophoretic assembly M Inaba, T Oda, M Kono, N Phansiri, T Morita, S Nakahara, M Nakano, ... Sensors and Actuators B: Chemical 344, 130257, 2021 | 44 | 2021 |
| Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate M Inaba, T Muta, M Kobayashi, T Saito, M Shibata, D Matsumura, T Kudo, ... Applied Physics Letters 109 (3), 2016 | 44 | 2016 |
| Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage H Kawarada, T Yamada, D Xu, Y Kitabayashi, M Shibata, D Matsumura, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 42 | 2016 |
| Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond T Kageura, K Kato, H Yamano, E Suaebah, M Kajiya, S Kawai, M Inaba, ... Applied Physics Express 10 (5), 055503, 2017 | 36 | 2017 |
| Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) S Kono, T Kageura, Y Hayashi, SG Ri, T Teraji, D Takeuchi, M Ogura, ... Diamond and Related Materials 93, 105-130, 2019 | 35 | 2019 |
| Normally-off two-dimensional hole gas diamond MOSFETs through nitrogen-ion implantation N Oi, T Kudo, M Inaba, S Okubo, S Onoda, A Hiraiwa, H Kawarada IEEE Electron Device Letters 40 (6), 933-936, 2019 | 32 | 2019 |
| Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing R Fukuda, P Balasubramanian, I Higashimata, G Koike, T Okada, ... New Journal of Physics 20 (8), 083029, 2018 | 28 | 2018 |
| Enhancement of the electron transfer rate in carbon nanotube flexible electrochemical sensors by surface functionalization K Nishimura, T Ushiyama, NX Viet, M Inaba, S Kishimoto, Y Ohno Electrochimica Acta 295, 157-163, 2019 | 27 | 2019 |
| Over 12000 A/cm2 and 3.2 m cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET M Iwataki, N Oi, K Horikawa, S Amano, J Nishimura, T Kageura, M Inaba, ... IEEE Electron Device Letters 41 (1), 111-114, 2019 | 25 | 2019 |
| Polycrystalline boron-doped diamond with an oxygen-terminated surface channel as an electrolyte-solution-gate field-effect transistor for pH sensing Y Shintani, S Ibori, K Igarashi, T Naramura, M Inaba, H Kawarada Electrochimica Acta 212, 10-15, 2016 | 19 | 2016 |
| Very low Schottky barrier height at carbon nanotube and silicon carbide interface M Inaba, K Suzuki, M Shibuya, CY Lee, Y Masuda, N Tomatsu, ... Applied Physics Letters 106 (12), 2015 | 19 | 2015 |
| Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for pH sensing S Falina, S Kawai, N Oi, H Yamano, T Kageura, E Suaebah, M Inaba, ... Sensors 18 (7), 2178, 2018 | 14 | 2018 |
| Response properties of nitrogen dioxide gas sensors with tin oxide decorated carbon nanotube channel fabricated by two-step dielectrophoretic assembly M Inaba, M Kono, T Oda, N Phansiri, M Nakano, J Suehiro Aip Advances 10 (5), 055223, 2020 | 12 | 2020 |
| Dielectrophoretic properties of submicron diamond particles in sodium chloride aqueous solution M Inaba, S Hayashi, H Li, M Kamimura, M Nakano, J Suehiro Japanese Journal of Applied Physics 59 (4), 046502, 2020 | 12 | 2020 |
| Sheet resistance underneath the Au ohmic-electrode on hydrogen-terminated surface-conductive diamond (001) S Kono, T Sasaki, M Inaba, A Hiraiwa, H Kawarada Diamond and Related Materials 80, 93-98, 2017 | 11 | 2017 |
| Characterization of extra-cellular vesicle dielectrophoresis and estimation of its electric properties H Chen, T Yamakawa, M Inaba, M Nakano, J Suehiro Sensors 22 (9), 3279, 2022 | 10 | 2022 |
Hiroshi KAWARADAWaseda UniversityVerified email at waseda.jp
