| Lanthanum-substituted bismuth titanate for use in non-volatile memories BH Park, BS Kang, SD Bu, TW Noh, J Lee, W Jo Nature 401 (6754), 682-684, 1999 | 2413 | 1999 |
| Reproducible resistance switching in polycrystalline NiO films S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ... Applied Physics Letters 85 (23), 5655-5657, 2004 | 1107 | 2004 |
| Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ... Nano letters 9 (4), 1476-1481, 2009 | 437 | 2009 |
| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 434 | 2007 |
| Synthesis of highly crystalline and monodisperse cobalt ferrite nanocrystals T Hyeon, Y Chung, J Park, SS Lee, YW Kim, BH Park The Journal of Physical Chemistry B 106 (27), 6831-6833, 2002 | 333 | 2002 |
| Interference effect on Raman spectrum of graphene on SiO 2/Si D Yoon, H Moon, YW Son, JS Choi, BH Park, YH Cha, YD Kim, H Cheong Physical Review B 80 (12), 125422, 2009 | 302 | 2009 |
| Friction anisotropy–driven domain imaging on exfoliated monolayer graphene JS Choi, JS Kim, IS Byun, DH Lee, MJ Lee, BH Park, C Lee, D Yoon, ... Science 333 (6042), 607-610, 2011 | 260 | 2011 |
| Differences in nature of defects between and BH Park, SJ Hyun, SD Bu, TW Noh, J Lee, HD Kim, TH Kim, W Jo Applied Physics Letters 74 (13), 1907-1909, 1999 | 256 | 1999 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 248 | 2007 |
| Conductivity switching characteristics and reset currents in NiO films S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, ... Applied Physics Letters 86 (9), 093509, 2005 | 242 | 2005 |
| Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire K Nagashima, T Yanagida, K Oka, M Taniguchi, T Kawai, JS Kim, BH Park Nano letters 10 (4), 1359-1363, 2010 | 232 | 2010 |
| Effects of very thin strain layers on dielectric properties of epitaxial films BH Park, EJ Peterson, QX Jia, J Lee, X Zeng, W Si, XX Xi Applied Physics Letters 78 (4), 533-535, 2001 | 196 | 2001 |
| Microstructure and dielectric properties of films grown on substrates Y Gim, T Hudson, Y Fan, C Kwon, AT Findikoglu, BJ Gibbons, BH Park, ... Applied Physics Letters 77 (8), 1200-1202, 2000 | 196 | 2000 |
| Variations in the Raman Spectrum as a Function of the Number of Graphene Layers D Yoon, H Moon, H Cheong, JS Choi, JA Choi, BH Park J. Korean Phys. Soc 55 (3), 1299-1303, 2009 | 195 | 2009 |
| Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes S Hong, T Choi, JH Jeon, Y Kim, H Lee, HY Joo, I Hwang, JS Kim, ... Advanced Materials 25 (16), 2339-2343, 2013 | 181 | 2013 |
| Write current reduction in transition metal oxide based resistance change memory SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ... Advanced materials 20 (5), 924-928, 2008 | 181 | 2008 |
| Nanoscale lithography on monolayer graphene using hydrogenation and oxidation IS Byun, D Yoon, JS Choi, I Hwang, DH Lee, MJ Lee, T Kawai, YW Son, ... ACS nano 5 (8), 6417-6424, 2011 | 147 | 2011 |
| High nonlinearity of films heteroepitaxially grown on MgO substrates BH Park, Y Gim, Y Fan, QX Jia, P Lu Applied Physics Letters 77 (16), 2587-2589, 2000 | 141 | 2000 |
| Electrode dependence of resistance switching in polycrystalline NiO films S Seo, MJ Lee, DC Kim, SE Ahn, BH Park, YS Kim, IK Yoo, IS Byun, ... Applied Physics Letters 87 (26), 263507, 2005 | 136 | 2005 |
| Different resistance switching behaviors of NiO thin films deposited on Pt and electrodes JS Choi, JS Kim, IR Hwang, SH Hong, SH Jeon, SO Kang, BH Park, ... Applied Physics Letters 95 (2), 022109, 2009 | 126 | 2009 |
