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Duc V. Dinh
Duc V. Dinh
Tyndall National Institute, Cork, Ireland
Verified email at tyndall.ie
Title
Cited by
Cited by
Year
Surface diffusion and layer morphology of ((112¯ 2)) GaN grown by metal-organic vapor phase epitaxy
S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl
Journal of Applied Physics 111 (3), 2012
592012
GHz bandwidth semipolar (112 2) InGaN/GaN light-emitting diodes
DV Dinh, Z Quan, B Roycroft, PJ Parbrook, B Corbett
Optics letters 41 (24), 5752-5755, 2016
472016
Polarity determination of polar and semipolar (112¯ 2) InN and GaN layers by valence band photoemission spectroscopy
D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ...
Journal of Applied Physics 114 (17), 2013
422013
Size-Dependent Bandwidth of Semipolar ( ) Light-Emitting-Diodes
M Haemmer, B Roycroft, M Akhter, DV Dinh, Z Quan, J Zhao, PJ Parbrook, ...
IEEE Photonics Technology Letters 30 (5), 439-442, 2018
402018
Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (1 0 0) substrates
DV Dinh, SM Kang, JH Yang, SW Kim, DH Yoon
Journal of crystal growth 311 (3), 495-499, 2009
392009
Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth
JH Yang, SM Kang, DV Dinh, DH Yoon
Thin Solid Films 517 (17), 5057-5060, 2009
372009
Growth and characterizations of semipolar (112¯ 2) InN
DV Dinh, D Skuridina, S Solopow, M Frentrup, M Pristovsek, P Vogt, ...
Journal of Applied Physics 112 (1), 2012
352012
Effect of V/III ratio on the growth of (112¯ 2) AlGaN by metalorganic vapour phase epitaxy
DV Dinh, SN Alam, PJ Parbrook
Journal of Crystal Growth 435, 12-18, 2016
262016
Single phase (112¯ 2) AlN grown on (101¯ 0) sapphire by metalorganic vapour phase epitaxy
DV Dinh, M Conroy, VZ Zubialevich, N Petkov, JD Holmes, PJ Parbrook
Journal of Crystal Growth 414, 94-99, 2015
252015
Semipolar (11 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates
DV Dinh, M Akhter, S Presa, G Kozlowski, D O'Mahony, PP Maaskant, ...
physica status solidi (a) 212 (10), 2196-2200, 2015
242015
High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes
Z Quan, DV Dinh, S Presa, B Roycroft, A Foley, M Akhter, D O'Mahony, ...
IEEE Photonics Journal 8 (5), 1-8, 2016
232016
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
D Skuridina, DV Dinh, M Pristovsek, B Lacroix, MP Chauvat, P Ruterana, ...
Applied surface science 307, 461-467, 2014
212014
High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 0 1¯ 0) sapphire
DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Journal of Crystal Growth 498, 377-380, 2018
192018
Enhanced UV luminescence from InAlN quantum well structures using two temperature growth
VZ Zubialevich, TC Sadler, DV Dinh, SN Alam, H Li, P Pampili, ...
Journal of luminescence 155, 108-111, 2014
182014
Silicon doping of semipolar (112¯ 2) AlxGa1− xN (0.50≤ x≤ 0.55)
DV Dinh, P Pampili, PJ Parbrook
Journal of Crystal Growth 451, 181-187, 2016
172016
Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates
DV Dinh, S Presa, M Akhter, PP Maaskant, B Corbett, PJ Parbrook
Semiconductor Science and Technology 30 (12), 125007, 2015
172015
Growth of semipolar (10 ̄1̄3) InN on m‐plane sapphire using MOVPE
DV Dinh, M Pristovsek, R Kremzow, M Kneissl
physica status solidi (RRL)–Rapid Research Letters 4 (5‐6), 127-129, 2010
172010
How to obtain metal-polar untwinned high-quality (1 0− 1 3) GaN on m-plane sapphire
N Hu, DV Dinh, M Pristovsek, Y Honda, H Amano
Journal of Crystal Growth 507, 205-208, 2019
162019
MOVPE growth and high-temperature annealing of (101¯ 0) AlN layers on (101¯ 0) sapphire
DV Dinh, H Amano, M Pristovsek
Journal of Crystal Growth 502, 14-18, 2018
162018
Aluminium incorporation in polar, semi-and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Scientific Reports 9 (1), 15802, 2019
152019
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