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Zixuan Feng
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MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao
Applied Physics Letters 114 (25), 2019
2622019
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 2019
1322019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
1102020
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
942020
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
772020
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...
APL Materials 8 (2), 2020
592020
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
492020
High-temperature low-pressure chemical vapor deposition of β-Ga2O3
Y Zhang, Z Feng, MR Karim, H Zhao
Journal of Vacuum Science & Technology A 38 (5), 2020
472020
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (25), 2020
462020
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters
Z Feng, MR Karim, H Zhao
APL Materials 7 (2), 2019
462019
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...
APL Materials 9 (5), 2021
442021
Mg acceptor doping in MOCVD (010) β-Ga2O3
Z Feng, AFM Bhuiyan, NK Kalarickal, S Rajan, H Zhao
Applied Physics Letters 117 (22), 2020
442020
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2 01) β-Ga2O3 substrates
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (14), 2020
412020
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
L Meng, Z Feng, AFMAU Bhuiyan, H Zhao
Crystal Growth & Design 22 (6), 3896-3904, 2022
312022
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates
AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
APL Materials 9 (10), 2021
312021
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ...
Applied Physics Letters 117 (17), 2020
312020
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire
MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao
Crystal Growth & Design 19 (8), 4661-4666, 2019
272019
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films
MR Karim, Z Feng, H Zhao
Crystal Growth & Design 18 (8), 4495-4502, 2018
262018
APL Mater. 8, 031104 (2020)
A Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, MR Karim, ...
26
Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films
Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ...
ACS applied materials & interfaces 13 (32), 38477-38490, 2021
242021
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