Zixuan Feng

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Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellVerified email at uml.edu
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityVerified email at osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Jared M JohnsonThe Ohio State UniversityVerified email at thermofisher.com
Md Rezaul KarimIntel CorporationVerified email at osu.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityVerified email at osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerified email at osu.edu
Steven RingelThe Ohio State UniversityVerified email at osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu

Zixuan Feng

The Ohio State University

Verified email at osu.edu

Applied Physics UWBG Semiconductors Ga2O3 MOCVD


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MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	262	2019
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	132	2019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	110	2020
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃ Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020	94	2020
MOCVD Epitaxy of Ultrawide Bandgap β-(Al_xGa_1–x)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	77	2020
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020	59	2020
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020	49	2020
High-temperature low-pressure chemical vapor deposition of β-Ga2O3 Y Zhang, Z Feng, MR Karim, H Zhao Journal of Vacuum Science & Technology A 38 (5), 2020	47	2020
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020	46	2020
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters Z Feng, MR Karim, H Zhao APL Materials 7 (2), 2019	46	2019
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021	44	2021
Mg acceptor doping in MOCVD (010) β-Ga2O3 Z Feng, AFM Bhuiyan, NK Kalarickal, S Rajan, H Zhao Applied Physics Letters 117 (22), 2020	44	2020
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020	41	2020
High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium L Meng, Z Feng, AFMAU Bhuiyan, H Zhao Crystal Growth & Design 22 (6), 3896-3904, 2022	31	2022
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021	31	2021
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020	31	2020
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN₂ Films on Sapphire MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao Crystal Growth & Design 19 (8), 4661-4666, 2019	27	2019
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In₂O₃ Films MR Karim, Z Feng, H Zhao Crystal Growth & Design 18 (8), 4495-4502, 2018	26	2018
APL Mater. 8, 031104 (2020) A Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, MR Karim, ...	26
Thermal Conductivity of β-Phase Ga₂O₃ and (Al_xGa_1–_x)₂O₃ Heteroepitaxial Thin Films Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ... ACS applied materials & interfaces 13 (32), 38477-38490, 2021	24	2021

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