Nanoplasma-enabled picosecond switches for ultrafast electronics M Samizadeh Nikoo, A Jafari, N Perera, M Zhu, G Santoruvo, E Matioli Nature 579 (7800), 534-539, 2020 | 72 | 2020 |
Impact of fin width on tri-gate GaN MOSHEMTs J Ma, G Santoruvo, L Nela, T Wang, E Matioli IEEE Transactions on Electron Devices 66 (9), 4068-4074, 2019 | 28 | 2019 |
Enhanced electrical performance and heat dissipation in AlGaN/GaN Schottky barrier diodes using hybrid tri-anode structure J Ma, G Santoruvo, P Tandon, E Matioli IEEE Transactions on Electron Devices 63 (9), 3614-3619, 2016 | 25 | 2016 |
Multi-channel AlGaN/GaN in-plane-gate field-effect transistors C Erine, J Ma, G Santoruvo, E Matioli IEEE Electron Device Letters 41 (3), 321-324, 2020 | 20 | 2020 |
Magneto-ballistic transport in GaN nanowires G Santoruvo, A Allain, D Ovchinnikov, E Matioli Applied Physics Letters 109 (10), 2016 | 14 | 2016 |
In-plane-gate GaN transistors for high-power RF applications G Santoruvo, E Matioli IEEE Electron Device Letters 38 (10), 1413-1416, 2017 | 12 | 2017 |
Broadband zero-bias RF field-effect rectifiers based on AlGaN/GaN nanowires G Santoruvo, MS Nikoo, E Matioli IEEE Microwave and Wireless Components Letters 30 (1), 66-69, 2019 | 11 | 2019 |
On the dynamic performance of laterally gated transistors MS Nikoo, G Santoruvo, C Erine, A Jafari, E Matioli IEEE Electron Device Letters 40 (7), 1171-1174, 2019 | 3 | 2019 |
AlGaN/GaN nanowires: From electron transport to RF applications G Santoruvo EPFL, 2020 | 2 | 2020 |
Nanoplasma-Enabled Picosecond Switches for Ultra-Fast Electronics and High-Power THz Sources MS Nikoo, A Jafari, N Perera, M Zhu, G Santoruvo, E Matioli 2020 IEEE International Conference on Plasma Science (ICOPS), 107-107, 2020 | | 2020 |
Group ID U13020 MA Asencio Hurtado, U Choi, IO Elhagali, C Erine, A Floriduz, HC Gür, ... | | |