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Alan C Farrell
Alan C Farrell
UCLA
Verified email at ngc.com
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Year
Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature
H Kim, WJ Lee, AC Farrell, JSD Morales, P Senanayake, SV Prikhodko, ...
Nano letters 17 (6), 3465-3470, 2017
1252017
Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links
H Kim, AC Farrell, P Senanayake, WJ Lee, DL Huffaker
Nano letters 16 (3), 1833-1839, 2016
872016
Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator
H Kim, WJ Lee, AC Farrell, A Balgarkashi, DL Huffaker
Nano letters 17 (9), 5244-5250, 2017
692017
Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation
D Ren, KM Azizur-Rahman, Z Rong, BC Juang, S Somasundaram, ...
Nano letters 19 (5), 2793-2802, 2019
652019
High-quality InAsSb nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition
AC Farrell, WJ Lee, P Senanayake, MA Haddad, SV Prikhodko, ...
Nano letters 15 (10), 6614-6619, 2015
552015
InGaAs–GaAs nanowire avalanche photodiodes toward single-photon detection in free-running mode
AC Farrell, X Meng, D Ren, H Kim, P Senanayake, NY Hsieh, Z Rong, ...
Nano letters 19 (1), 582-590, 2018
492018
Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with pn Heterojunctions
D Ren, X Meng, Z Rong, M Cao, AC Farrell, S Somasundaram, ...
Nano letters 18 (12), 7901-7908, 2018
462018
High quantum efficiency nanopillar photodiodes overcoming the diffraction limit of light
WJ Lee, P Senanayake, AC Farrell, A Lin, CH Hung, DL Huffaker
Nano Letters 16 (1), 199-204, 2016
442016
Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors
P Senanayake, CH Hung, AC Farrell, DA Ramirez, J Shapiro, CK Li, ...
Nano Letters, 2012
432012
Diode characteristics approaching bulk limits in GaAs nanowire array photodetectors
AC Farrell, P Senanayake, X Meng, NY Hsieh, DL Huffaker
Nano letters 17 (4), 2420-2425, 2017
332017
Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes
AC Farrell, P Senanayake, CH Hung, G El-Howayek, A Rajagopal, ...
Scientific reports 5 (1), 17580, 2015
262015
Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
H Kim, D Ren, AC Farrell, DL Huffaker
Nanotechnology 29 (8), 085601, 2018
242018
Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates
D Ren, AC Farrell, BS Williams, DL Huffaker
Nanoscale 9 (24), 8220-8228, 2017
232017
Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources
WJ Lee, H Kim, AC Farrell, P Senanayake, DL Huffaker
Applied Physics Letters 108 (8), 2016
192016
Axial InAs (Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 2.5 µm
D Ren, AC Farrell, DL Huffaker
Optical Materials Express 8 (4), 1075-1081, 2018
162018
Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model
D Ren, AC Scofield, AC Farrell, Z Rong, MA Haddad, RB Laghumavarapu, ...
Nanoscale 10 (16), 7792-7802, 2018
162018
Enhanced carrier multiplication in InAs quantum dots for bulk avalanche photodetector applications
YJ Ma, YG Zhang, Y Gu, XY Chen, P Wang, BC Juang, A Farrell, BL Liang, ...
Advanced Optical Materials 5 (9), 1601023, 2017
162017
Selective-area InAsSb nanowires on InP for 3–5 μm mid-wavelength infrared optoelectronics
D Ren, AC Farrell, DL Huffaker
MRS Advances 2 (58-59), 3565-3570, 2017
112017
Performance of IEEE 802.11 mac in underwater wireless channels
AC Farrell, J Peng
Procedia Computer Science 10, 62-69, 2012
82012
Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers
D Ren, Z Rong, C Minh, AC Farrell, X Meng, DL Huffaker
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and …, 2018
72018
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