Z. R. Wasilewski
Z. R. Wasilewski
Electrical and Computer Engineering & Waterloo Institute for Nanotechnology, University of Waterloo
Verified email at - Homepage
Cited by
Cited by
Coupling and entangling of quantum states in quantum dot molecules
M Bayer, P Hawrylak, K Hinzer, S Fafard, M Korkusinski, ZR Wasilewski, ...
Science 291 (5503), 451-453, 2001
Terahertz quantum cascade lasers operating up to∼ 200 K with optimized oscillator strength and improved injection tunneling
S Fathololoumi, E Dupont, CWI Chan, ZR Wasilewski, SR Laframboise, ...
Optics express 20 (4), 3866-3876, 2012
Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy
M Ciorga, AS Sachrajda, P Hawrylak, C Gould, P Zawadzki, S Jullian, ...
Physical Review B 61 (24), R16315, 2000
Size and shape engineering of vertically stacked self-assembled quantum dots
ZR Wasilewski, S Fafard, JP McCaffrey
Journal of crystal growth 201, 1131-1135, 1999
Phase-controlled currents in semiconductors
E Dupont, PB Corkum, HC Liu, M Buchanan, ZR Wasilewski
Physical review letters 74 (18), 3596, 1995
Quantum dot infrared photodetectors
HC Liu, M Gao, J McCaffrey, ZR Wasilewski, S Fafard
Applied Physics Letters 78 (1), 79-81, 2001
Negative capacitance effect in semiconductor devices
M Ershov, HC Liu, L Li, M Buchanan, ZR Wasilewski, AK Jonscher
IEEE Transactions on Electron devices 45 (10), 2196-2206, 1998
High-power portable terahertz laser systems
A Khalatpour, AK Paulsen, C Deimert, ZR Wasilewski, Q Hu
Nature Photonics 15 (1), 16-22, 2021
Coherent control of three-spin states in a triple quantum dot
L Gaudreau, G Granger, A Kam, GC Aers, SA Studenikin, P Zawadzki, ...
Nature Physics 8 (1), 54-58, 2012
Manipulating the energy levels of semiconductor quantum dots
S Fafard, ZR Wasilewski, CN Allen, D Picard, M Spanner, JP McCaffrey, ...
Physical Review B 59 (23), 15368, 1999
Mode-locked pulses from mid-infrared quantum cascade lasers
CY Wang, L Kuznetsova, VM Gkortsas, L Diehl, FX Kaertner, MA Belkin, ...
Optics Express 17 (15), 12929-12943, 2009
InAs self‐assembled quantum dots on InP by molecular beam epitaxy
S Fafard, Z Wasilewski, J McCaffrey, S Raymond, S Charbonneau
Applied Physics Letters 68 (7), 991-993, 1996
Terahertz quantum-cascade lasers based on a three-well active module
H Luo, SR Laframboise, ZR Wasilewski, GC Aers, HC Liu, JC Cao
Applied physics letters 90 (4), 2007
Fractal conductance fluctuations in a soft-wall stadium and a Sinai billiard
AS Sachrajda, R Ketzmerick, C Gould, Y Feng, PJ Kelly, A Delage, ...
Physical review letters 80 (9), 1948, 1998
Origin of switching noise in Ga As∕ Al x Ga 1− x As lateral gated devices
M Pioro-Ladriere, JH Davies, AR Long, AS Sachrajda, L Gaudreau, ...
Physical Review B 72 (11), 115331, 2005
Background-limited terahertz quantum-well photodetector
H Luo, HC Liu, CY Song, ZR Wasilewski
Applied Physics Letters 86 (23), 2005
Excitonic energy shell structure of self-assembled InGaAs/GaAs quantum dots
S Raymond, S Studenikin, A Sachrajda, Z Wasilewski, SJ Cheng, ...
Physical review letters 92 (18), 187402, 2004
How good is the polarization selection rule for intersubband transitions?
HC Liu, M Buchanan, ZR Wasilewski
Applied Physics Letters 72 (14), 1682-1684, 1998
Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors
HC Liu, ZR Wasilewski, M Buchanan, H Chu
Applied physics letters 63 (6), 761-763, 1993
Composition of AlGaAs
ZR Wasilewski, MM Dion, DJ Lockwood, P Poole, RW Streater, ...
Journal of applied physics 81 (4), 1683-1694, 1997
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