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shraddha kothari
shraddha kothari
Verified email at iitb.ac.in
Title
Cited by
Cited by
Year
Germanium oxynitride gate interlayer dielectric formed on Ge (100) using decoupled plasma nitridation
P Bhatt, K Chaudhuri, S Kothari, A Nainani, S Lodha
Applied Physics Letters 103 (17), 2013
472013
Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations
SGSL Shraddha Kothari, Chandan Joishi, Sayantan Ghosh, Dipankar Biswas ...
Applied Physics Express 9 (7), 071302, 2016
112016
Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium
S Kothari, D Vaidya, H Nejad, N Variam, S Ganguly, S Lodha
Applied Physics Letters 112 (20), 2018
72018
Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks
S Kothari, C Joishi, H Nejad, N Variam, S Lodha
Applied Physics Letters 109 (7), 2016
72016
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors—Part I: Behavioral Model
D Vaidya, S Kothari, T Abbey, A Khiat, S Stathopoulos, L Michalas, A Serb, ...
IEEE Transactions on Electron Devices 68 (10), 4877-4884, 2021
62021
Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap–Detrap Techniques
C Joishi, S Ghosh, S Kothari, N Parihar, S Mukhopadhyay, S Mahapatra, ...
IEEE Transactions on Electron Devices 65 (10), 4245-4253, 2018
52018
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors—Part II: Physics-Based Model
D Vaidya, S Kothari, T Abbey, S Stathopoulos, L Michalas, A Serb, ...
IEEE Transactions on Electron Devices 68 (10), 4885-4890, 2021
32021
Completeness issues for join dependencies derived from the universal relation join dependency
LL Miller, SK Gadia, S Kothari, KC Liu
Information processing letters 28 (5), 269-274, 1988
31988
Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3IL
C Joishi, S Kothari, S Ghosh, S Mukhopadhyay, S Mahapatra, S Lodha
2017 IEEE International Reliability Physics Symposium (IRPS), 5C-5.1-5C-5.7, 2017
22017
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications
S Kothari, C Joishi, D Vaidya, H Nejad, B Colombeau, S Ganguly, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 214-217, 2015
12015
Dataset for" Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOx-Based Memristors: Part I—Behavioral Model"
D Vaidya, S Kothari, T Abbey, A Khiat, S Stathopoulos, L Michalas, A Serb, ...
University of Southampton, 2021
2021
Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS
S Kothari, JS Rathore, KR Khiangte, S Mahapatra, S Lodha
2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018
2018
Minority Carrier Lifetime Enhancement of C-Si/TiO2 Heterojunction by Post Deposition Annealing
AA S. Bhatia, S. Kothari, N. Raorane, S. Lodha, P.R. Nair
32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich,, 2016
2016
Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric
S Kothari, C Joishi, D Biswas, D Vaidya, S Ganguly, S Lodha
2015 73rd Annual Device Research Conference (DRC), 285-286, 2015
2015
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