| Nonlinear dispersive modeling of electron devices oriented to GaN power amplifier design A Raffo, V Vadala, DMMP Schreurs, G Crupi, G Avolio, A Caddemi, ... IEEE Transactions on Microwave Theory and Techniques 58 (4), 710-718, 2010 | 123 | 2010 |
| A new approach to microwave power amplifier design based on the experimental characterization of the intrinsic electron-device load line A Raffo, F Scappaviva, G Vannini IEEE transactions on microwave theory and techniques 57 (7), 1743-1752, 2009 | 112 | 2009 |
| A new millimeter-wave small-signal modeling approach for pHEMTs accounting for the output conductance time delay G Crupi, DMMP Schreurs, A Raffo, A Caddemi, G Vannini IEEE transactions on microwave theory and techniques 56 (4), 741-746, 2008 | 88 | 2008 |
| Neural approach for temperature‐dependent modeling of GaN HEMTs Z Marinković, G Crupi, A Caddemi, G Avolio, A Raffo, V Marković, ... International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015 | 80 | 2015 |
| Behavioral modeling of GaN FETs: A load-line approach A Raffo, G Bosi, V Vadalą, G Vannini IEEE Transactions on Microwave Theory and Techniques 62 (1), 73-82, 2013 | 79 | 2013 |
| Characterization of GaN HEMT low-frequency dispersion through a multiharmonic measurement system A Raffo, S Di Falco, V Vadala, G Vannini IEEE Transactions on Microwave Theory and Techniques 58 (9), 2490-2496, 2010 | 79 | 2010 |
| GaN HEMT noise model based on electromagnetic simulations A Nalli, A Raffo, G Crupi, S D'Angelo, D Resca, F Scappaviva, G Salvo, ... IEEE Transactions on Microwave Theory and Techniques 63 (8), 2498-2508, 2015 | 73 | 2015 |
| Temperature influence on GaN HEMT equivalent circuit G Crupi, A Raffo, G Avolio, DMMP Schreurs, G Vannini, A Caddemi IEEE Microwave and Wireless Components Letters 26 (10), 813-815, 2016 | 70 | 2016 |
| A load–pull characterization technique accounting for harmonic tuning V Vadalą, A Raffo, S Di Falco, G Bosi, A Nalli, G Vannini IEEE transactions on microwave theory and techniques 61 (7), 2695-2704, 2013 | 66 | 2013 |
| An Extensive Experimental Analysis of the Kink Effects in and for a GaN HEMT G Crupi, A Raffo, Z Marinković, G Avolio, A Caddemi, V Marković, ... IEEE Transactions on Microwave Theory and Techniques 62 (3), 513-520, 2014 | 64 | 2014 |
| Scalable equivalent circuit FET model for MMIC design identified through FW-EM analyses D Resca, A Raffo, A Santarelli, G Vannini, F Filicori IEEE transactions on microwave theory and techniques 57 (2), 245-253, 2009 | 64 | 2009 |
| Scalable nonlinear FET model based on a distributed parasitic network description D Resca, A Santarelli, A Raffo, R Cignani, G Vannini, F Filicori, ... IEEE transactions on microwave theory and techniques 56 (4), 755-766, 2008 | 54 | 2008 |
| Measurement uncertainty propagation in transistor model parameters via polynomial chaos expansion A Petrocchi, A Kaintura, G Avolio, D Spina, T Dhaene, A Raffo, ... IEEE Microwave and Wireless Components Letters 27 (6), 572-574, 2017 | 52 | 2017 |
| X-band GaN power amplifier for future generation SAR systems D Resca, A Raffo, S Di Falco, F Scappaviva, V Vadalą, G Vannini IEEE Microwave and Wireless Components Letters 24 (4), 266-268, 2014 | 52 | 2014 |
| Investigation on the non‐quasi‐static effect implementation for millimeter‐wave FET models G Crupi, DMMP Schreurs, A Caddemi, A Raffo, G Vannini International Journal of RF and Microwave Computer‐Aided Engineering: Co …, 2010 | 51 | 2010 |
| Investigation on the thermal behavior of microwave GaN HEMTs G Crupi, G Avolio, A Raffo, P Barmuta, DMMP Schreurs, A Caddemi, ... Solid-state electronics 64 (1), 28-33, 2011 | 43 | 2011 |
| Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects G Crupi, DMMP Schreurs, A Caddemi, I Angelov, M Homayouni, A Raffo, ... Microelectronic engineering 86 (11), 2283-2289, 2009 | 42 | 2009 |
| High-frequency extraction of the extrinsic capacitances for GaN HEMT technology G Crupi, DMMP Schreurs, A Caddemi, A Raffo, F Vanaverbeke, G Avolio, ... IEEE microwave and wireless components letters 21 (8), 445-447, 2011 | 39 | 2011 |
| Accurate GaN HEMT nonquasi‐static large‐signal model including dispersive effects G Crupi, A Raffo, DMMP Schreurs, G Avolio, V Vadalą, S Di Falco, ... Microwave and Optical Technology Letters 53 (3), 692-697, 2011 | 38 | 2011 |
| Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects A Raffo, A Santarelli, PA Traverso, G Vannini, F Palomba, F Scappaviva, ... IEEE transactions on microwave theory and techniques 53 (11), 3449-3459, 2005 | 38 | 2005 |
