| Temperature-dependent phonon shifts in monolayer MoS2 NA Lanzillo, A Glen Birdwell, M Amani, FJ Crowne, PB Shah, S Najmaei, ... Applied Physics Letters 103 (9), 093102, 2013 | 261 | 2013 |
| Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ... ACS nano 10 (3), 3580-3588, 2016 | 246 | 2016 |
| Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices D Sharma, M Amani, A Motayed, PB Shah, AG Birdwell, S Najmaei, ... Nanotechnology 25 (15), 155702, 2014 | 64 | 2014 |
| Thermally stable, high performance transfer doping of diamond using transition metal oxides KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ... Scientific reports 8 (1), 1-9, 2018 | 57 | 2018 |
| Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation RP Joshi, V Sridhara, P Shah, RD Del Rosario Journal of applied physics 93 (8), 4836-4842, 2003 | 50 | 2003 |
| Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications PB Shah, M Amani, ML Chin, TP O’regan, FJ Crowne, M Dubey Solid-State Electronics 91, 87-90, 2014 | 43 | 2014 |
| Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device PB Shah US Patent 7,304,363, 2007 | 42 | 2007 |
| Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors PB Shah US Patent 6,960,526, 2005 | 40 | 2005 |
| Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors RP Joshi, V Sridhara, B Jogai, P Shah, RD Del Rosario Journal of applied physics 93 (12), 10046-10052, 2003 | 35 | 2003 |
| Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state PB Shah US Patent 6,703,642, 2004 | 34 | 2004 |
| 4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications AK Agarwal, S Seshadri, M MacMillan, SS Mani, J Casady, P Sanger, ... Solid-State Electronics 44 (2), 303-308, 2000 | 34 | 2000 |
| Annealing ion implanted SiC with an AlN cap KA Jones, PB Shah, KW Kirchner, RT Lareau, MC Wood, MH Ervin, ... Materials Science and Engineering: B 61, 281-286, 1999 | 34 | 1999 |
| Transfer characteristics and low-frequency noise in single- and multi-layer MoS2 field-effect transistors D Sharma, A Motayed, PB Shah, M Amani, M Georgieva, A Glen Birdwell, ... Applied Physics Letters 107 (16), 162102, 2015 | 30 | 2015 |
| Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ... IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020 | 28 | 2020 |
| DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN PB Shah, RH Dedhia, RP Tompkins, EA Viveiros, KA Jones Solid-State Electronics 78, 121-126, 2012 | 28 | 2012 |
| Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures PS Mirabedini, B Debnath, MR Neupane, P Alex Greaney, ... Applied Physics Letters 117 (12), 121901, 2020 | 21 | 2020 |
| Diamond RF Transistor Technology with ft=41 GHz and fmax=44 GHz TG Ivanov, J Weil, PB Shah, AG Birdwell, K Kingkeo, EA Viveiros 2018 IEEE/MTT-S International Microwave Symposium-IMS, 1461-1463, 2018 | 21 | 2018 |
| Method of optimizing a GA—nitride device material structure for a frequency multiplication device PB Shah, HA Hung US Patent 8,796,082, 2014 | 21 | 2014 |
| Method of optimizing a GA—nitride device material structure for a frequency multiplication device PB Shah, HA Hung US Patent 8,796,082, 2014 | 21 | 2014 |
| Carrier transport related analysis of high-power AlGaN/GaN HEMT structures PB Shah, DD Smith, TE Griffin, KA Jones, ST Sheppard IEEE Transactions on Electron Devices 47 (2), 308-312, 2000 | 21 | 2000 |
