| Positron beams for solids and surfaces A Van Veen, H Schut, J De Vries, RA Hakvoort, MR Ijpma, PJ Schultz, ... AIP Conf. Proc 218, 171-196, 1990 | 359 | 1990 |
| Quantum confinement in Si and Ge nanostructures: Theory and experiment EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova Applied Physics Reviews 1 (1), 2014 | 248 | 2014 |
| Infrared spectroscopy of hydrogen in ZnO MD McCluskey, SJ Jokela, KK Zhuravlev, PJ Simpson, KG Lynn Applied Physics Letters 81 (20), 3807-3809, 2002 | 239 | 2002 |
| Quantum confinement in Si and Ge nanostructures EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova Journal of Applied Physics 111 (3), 2012 | 222 | 2012 |
| Superfast timing performance from ZnO scintillators PJ Simpson, R Tjossem, AW Hunt, KG Lynn, V Munné Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003 | 113 | 2003 |
| Detection of current‐induced vacancies in thin aluminum–copper lines using positrons P Asoka‐Kumar, K O’brien, KG Lynn, PJ Simpson, KP Rodbell Applied physics letters 68 (3), 406-408, 1996 | 112 | 1996 |
| Vacancy generation resulting from electrical deactivation of arsenic DW Lawther, U Myler, PJ Simpson, PM Rousseau, PB Griffin, JD Plummer Applied physics letters 67 (24), 3575-3577, 1995 | 106 | 1995 |
| Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption PJ Simpson, M Vos, IV Mitchell, C Wu, PJ Schultz Physical Review B 44 (22), 12180, 1991 | 96 | 1991 |
| Impurity gettering to secondary defects created by MeV ion implantation in silicon RA Brown, O Kononchuk, GA Rozgonyi, S Koveshnikov, AP Knights, ... Journal of applied physics 84 (5), 2459-2465, 1998 | 94 | 1998 |
| Survey of elemental specificity in positron annihilation peak shapes U Myler, PJ Simpson Physical Review B 56 (22), 14303, 1997 | 91 | 1997 |
| X-ray-and neutron-scattering measurements of two length scales in the magnetic critical fluctuations of holmium TR Thurston, G Helgesen, JP Hill, D Gibbs, BD Gaulin, PJ Simpson Physical Review B 49 (22), 15730, 1994 | 75 | 1994 |
| Electronic structure study of ion-implanted Si quantum dots in a SiO matrix: Analysis of quantum confinement theories EG Barbagiovanni, LV Goncharova, PJ Simpson Physical Review B 83 (3), 035112, 2011 | 64 | 2011 |
| Chemical information in positron annihilation spectra U Myler, RD Goldberg, AP Knights, DW Lawther, PJ Simpson Applied physics letters 69 (22), 3333-3335, 1996 | 61 | 1996 |
| Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon DD Perovic, GC Weatherly, PJ Simpson, PJ Schultz, TE Jackman, ... Physical Review B 43 (17), 14257, 1991 | 59 | 1991 |
| Defect structure of carbon rich a-SiC: H films and the influence of gas and heat treatments T Friessnegg, M Boudreau, P Mascher, A Knights, PJ Simpson, W Puff Journal of applied physics 84 (2), 786-795, 1998 | 50 | 1998 |
| Annealing behavior of low-energy ion-implanted phosphorus in silicon S Ruffell, IV Mitchell, PJ Simpson Journal of applied physics 97 (12), 2005 | 47 | 2005 |
| Defect studies of ZnSe nanowires U Philipose, A Saxena, HE Ruda, PJ Simpson, YQ Wang, KL Kavanagh Nanotechnology 19 (21), 215715, 2008 | 41 | 2008 |
| Observation of fluorine-vacancy complexes in silicon PJ Simpson, Z Jenei, P Asoka-Kumar, RR Robison, ME Law Applied physics letters 85 (9), 1538-1540, 2004 | 41 | 2004 |
| Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon LS Adam, ME Law, S Szpala, PJ Simpson, D Lawther, O Dokumaci, ... Applied Physics Letters 79 (5), 623-625, 2001 | 41 | 2001 |
| Effect of annealing on the defect structure in a‐SiC:H films T Friessnegg, M Boudreau, J Brown, P Mascher, PJ Simpson, W Puff Journal of applied physics 80 (4), 2216-2223, 1996 | 38 | 1996 |
