Theoretical limits of thermophotovoltaic solar energy conversion NP Harder, P Würfel Semiconductor science and technology 18 (5), S151, 2003 | 349 | 2003 |
A Simple Model Describing the Symmetric Characteristics of Polycrystalline Si/ Monocrystalline Si, and Polycrystalline Si/ Monocrystalline Si Junctions R Peibst, U Römer, KR Hofmann, B Lim, TF Wietler, J Krügener, ... IEEE Journal of Photovoltaics 4 (3), 841-850, 2014 | 128 | 2014 |
Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes MA Kessler, T Ohrdes, B Wolpensinger, NP Harder Semiconductor Science and Technology 25 (5), 055001, 2010 | 121 | 2010 |
Efficient interdigitated back‐contacted silicon heterojunction solar cells N Mingirulli, J Haschke, R Gogolin, R Ferré, TF Schulze, J Düsterhöft, ... physica status solidi (RRL)–Rapid Research Letters 5 (4), 159-161, 2011 | 114 | 2011 |
Impact of surface topography and laser pulse duration for laser ablation of solar cell front side passivating SiNx layers S Hermann, T Dezhdar, NP Harder, R Brendel, M Seibt, S Stroj Journal of Applied Physics 108 (11), 2010 | 104 | 2010 |
Picosecond laser ablation of SiO2 layers on silicon substrates S Hermann, NP Harder, R Brendel, D Herzog, H Haferkamp Applied Physics A 99, 151-158, 2010 | 102 | 2010 |
Theory of analyzing free energy losses in solar cells R Brendel, S Dreissigacker, NP Harder, PP Altermatt Applied Physics Letters 93 (17), 2008 | 97 | 2008 |
Thermophotonics NP Harder, MA Green Semiconductor Science and Technology 18 (5), S270, 2003 | 97 | 2003 |
Laser structuring for back junction silicon solar cells P Engelhart, NP Harder, R Grischke, A Merkle, R Meyer, R Brendel Progress in Photovoltaics: Research and Applications 15 (3), 237-243, 2007 | 87 | 2007 |
Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks Y Larionova, V Mertens, NP Harder, R Brendel Applied physics letters 96 (3), 2010 | 86 | 2010 |
Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? B Veith, T Ohrdes, F Werner, R Brendel, PP Altermatt, NP Harder, ... Solar Energy Materials and Solar Cells 120, 436-440, 2014 | 69 | 2014 |
Fast and non-destructive assessment of epitaxial quality of polycrystalline silicon films on glass by optical measurements A Straub, PI Widenborg, A Sproul, Y Huang, NP Harder, AG Aberle Journal of Crystal Growth 265 (1-2), 168-173, 2004 | 61 | 2004 |
Progress in the surface passivation of silicon solar cells J Schmidt, A Merkle, R Bock, PP Altermatt, A Cuevas, NPN den Harder, ... conference; 23rd EU PVSEC, 2DP. 2.4-974-981, 2008 | 55 | 2008 |
Formation of large-grained uniform poly-Si films on glass at low temperature AG Aberle, NP Harder, S Oelting Journal of crystal growth 226 (2-3), 209-214, 2001 | 51 | 2001 |
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si Solar cells B Veith, T Dullweber, M Siebert, C Kranz, F Werner, NP Harder, J Schmidt, ... Energy Procedia 27, 379-384, 2012 | 50 | 2012 |
High efficiency n-type emitter-wrap-through silicon solar cells F Kiefer, C Ulzhöfer, T Brendemühl, NP Harder, R Brendel, V Mertens, ... IEEE Journal of photovoltaics 1 (1), 49-53, 2011 | 50 | 2011 |
Analysis of series resistance losses in a-Si: H/c-Si heterojunction solar cells R Gogolin, M Turcu, R Ferré, J Clemens, NP Harder, R Brendel, J Schmidt IEEE Journal of Photovoltaics 4 (5), 1169-1176, 2014 | 47 | 2014 |
Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells D Pysch, C Meinhard, NP Harder, M Hermle, SW Glunz Journal of Applied Physics 110 (9), 2011 | 47 | 2011 |
Photovoltaic solar cell and solar module NP Harder, P Mogensen, U Blieske US Patent 7,994,420, 2011 | 47 | 2011 |
Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes MA Kessler, T Ohrdes, B Wolpensinger, R Bock, NP Harder 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001556-001561, 2009 | 43 | 2009 |