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Geun Ho Ahn
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MoS2 transistors with 1-nanometer gate lengths
SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ...
Science 354 (6308), 99-102, 2016
11412016
Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature
J Bullock, M Amani, J Cho, YZ Chen, GH Ahn, V Adinolfi, VR Shrestha, ...
Nature Photonics 12 (10), 601-607, 2018
2962018
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
T Roy, M Tosun, M Hettick, GH Ahn, C Hu, A Javey
Applied Physics Letters 108 (8), 083111, 2016
2792016
Recombination kinetics and effects of superacid treatment in sulfur-and selenium-based transition metal dichalcogenides
M Amani, P Taheri, R Addou, GH Ahn, D Kiriya, DH Lien, JW Ager III, ...
Nano letters 16 (4), 2786-2791, 2016
2562016
4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics
DM Lukin, C Dory, MA Guidry, KY Yang, SD Mishra, R Trivedi, ...
Nature Photonics 14 (5), 330-334, 2020
2292020
Strain-engineered growth of two-dimensional materials
GH Ahn, M Amani, H Rasool, DH Lien, JP Mastandrea, JW Ager Iii, ...
Nature communications 8 (1), 1-8, 2017
2222017
Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
M Tosun, L Chan, M Amani, T Roy, GH Ahn, P Taheri, C Carraro, JW Ager, ...
ACS nano 10 (7), 6853-6860, 2016
1862016
Mid-wave infrared photoconductors based on black phosphorus-arsenic alloys
M Amani, E Regan, J Bullock, GH Ahn, A Javey
ACS nano 11 (11), 11724-11731, 2017
1572017
High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition
M Amani, RA Burke, X Ji, P Zhao, DH Lien, P Taheri, GH Ahn, D Kirya, ...
ACS nano 10 (7), 6535-6541, 2016
1512016
Inverse-designed non-reciprocal pulse router for chip-based LiDAR
KY Yang, J Skarda, M Cotrufo, A Dutt, GH Ahn, M Sawaby, D Vercruysse, ...
Nature Photonics 14 (6), 369-374, 2020
1322020
Large-area and bright pulsed electroluminescence in monolayer semiconductors
DH Lien, M Amani, SB Desai, GH Ahn, K Han, JH He, JW Ager III, MC Wu, ...
Nature communications 9 (1), 1229, 2018
1302018
Synthetic WSe2 monolayers with high photoluminescence quantum yield
H Kim*, GH Ahn*, J Cho, M Amani, JP Mastandrea, CK Groschner, ...
Science advances 5 (1), eaau4728, 2019
822019
Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts
TY Kim, M Amani, GH Ahn, Y Song, A Javey, S Chung, T Lee
ACS nano 10 (2), 2819-2826, 2016
692016
Inverse-designed photonics for semiconductor foundries
AY Piggott, EY Ma, L Su, GH Ahn, NV Sapra, D Vercruysse, AM Netherton, ...
ACS Photonics 7 (3), 569-575, 2020
562020
Substrate-Dependent Exciton Diffusion and Annihilation in Chemically Treated MoS2 and WS2
AJ Goodman, DH Lien, GH Ahn, LL Spiegel, M Amani, AP Willard, ...
The Journal of Physical Chemistry C 124 (22), 12175-12184, 2020
362020
Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure
J Pak, I Lee, K Cho, JK Kim, H Jeong, WT Hwang, GH Ahn, K Kang, ...
ACS nano 13 (8), 9638-9646, 2019
342019
Scanning probe lithography patterning of monolayer semiconductors and application in quantifying edge recombination
P Zhao, R Wang, DH Lien, Y Zhao, H Kim, J Cho, GH Ahn, A Javey
Advanced materials 31 (48), 1900136, 2019
292019
Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer
J Pak, M Min, K Cho, DH Lien, GH Ahn, J Jang, D Yoo, S Chung, A Javey, ...
Applied Physics Letters 109 (18), 183502, 2016
292016
Highly Reliable Superhydrophobic Protection for Organic Field-Effect Transistors by Fluoroalkylsilane-Coated TiO2 Nanoparticles
D Yoo, Y Kim, M Min, GH Ahn, DH Lien, J Jang, H Jeong, Y Song, ...
ACS nano 12 (11), 11062-11069, 2018
282018
Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
Y Song, H Jeong, S Chung, GH Ahn, TY Kim, J Jang, D Yoo, H Jeong, ...
Scientific reports 6 (1), 33967, 2016
272016
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