| High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ... ACS applied materials & interfaces 7 (1), 62-67, 2015 | 61 | 2015 |
| Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics B Baert, M Schmeits, ND Nguyen Applied surface science 291, 25-30, 2014 | 12 | 2014 |
| Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen Solid-State Electronics 110, 65-70, 2015 | 11 | 2015 |
| Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations B Baert PQDT-Global, 2017 | 3 | 2017 |
| Impedance Spectroscopy of GeSn-based Heterostructures B Baert, O Nakatsuka, S Zaima, ND Nguyen ECS Transactions 50 (9), 481, 2013 | 2 | 2013 |
| Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method B Baert, O Nakatsuka, S Zaima, ND Nguyen ECS Meeting Abstracts, 3158, 2012 | 1 | 2012 |
| Current transients in reverse-biased p-GeSn/n-Ge diodes B Baert, S Gupta, F Gencarelli, Y Shimura, R Loo, E Simoen, ND Nguyen | | 2015 |
| Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, D Nguyen | | 2015 |
| Reverse current transient behavior of pGeSn/nGe diodes B Baert, S Gupta, F Gencarelli, Y Shimura, R Loo, E Simoen, ND Nguyen The 9th International Conference on Silicon Epitaxy and Heterostructures …, 2015 | | 2015 |
| Electrical modelling of interface traps in GeSn MOS structures B Baert, D Cerica, M Schmeits, ND Nguyen JSPS International Core-to-Core Program Workshop on Atomically Controlled …, 2014 | | 2014 |
| Impact of traps on the electrical characteristics of GeSn/Ge diodes B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen E-MRS 2014 Fall Meeting-Symposium J, 2014 | | 2014 |
| Electrical characterization of pGeSn/nGe diodes B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen 2014 7th International Silicon-Germanium Technology and Device Meeting …, 2014 | | 2014 |
| Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers S Gupta, E Simoen, T Asano, O Nakatsuka, F Gencarelli, Y Shimura, ... The 8th International Conference on Silicon Epitaxy and Heterostructures …, 2013 | | 2013 |
| Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics B Baert, M Schmeits, ND Nguyen European Materials Research Society (E-MRS) 2013 Spring Meeting, 2013 | | 2013 |
| Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy B Baert, DYN Truong, O Nakatsuka, S Zaima, ND Nguyen 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | | 2012 |
| Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures B Baert, ND Nguyen " Jaszowiec" International School and Conference on the Physics of …, 2012 | | 2012 |
| New method for photovoltaic solar cell physical parameters extraction S AAZOU, A Ibral, EM ASSAID, B BAERT, ND NGUYEN CIEREE'2011, 18, 2011 | | 2011 |
| New search B Baert, M Schmeits, ND Nguyen | | |
