Novel synaptic memory device for neuromorphic computing S Mandal, A El-Amin, K Alexander, B Rajendran, R Jha Scientific reports 4 (1), 5333, 2014 | 116 | 2014 |
Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury IEEE Transactions on Electron Devices 64 (3), 805-808, 2016 | 92 | 2016 |
Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ... IEEE Electron Device Letters 38 (7), 933-936, 2017 | 52 | 2017 |
Switching dynamics and charge transport studies of resistive random access memory devices B Long, Y Li, S Mandal, R Jha, K Leedy Applied Physics Letters 101 (11), 2012 | 43 | 2012 |
Effects of Mg-Doping on -Based ReRAM Device Switching Characteristics BM Long, S Mandal, J Livecchi, R Jha IEEE electron device letters 34 (10), 1247-1249, 2013 | 35 | 2013 |
Demonstration of GaN static induction transistor (SIT) using self-aligned process W Li, D Ji, R Tanaka, S Mandal, M Laurent, S Chowdhury IEEE Journal of the Electron Devices Society 5 (6), 485-490, 2017 | 34 | 2017 |
A demonstration of nitrogen polar gallium nitride current aperture vertical electron transistor S Rajabi, S Mandal, B Ercan, H Li, MA Laurent, S Keller, S Chowdhury IEEE Electron Device Letters 40 (6), 885-888, 2019 | 19 | 2019 |
Observation and discussion of avalanche electroluminescence in GaN pn diodes offering a breakdown electric field of 3 MV cm− 1 S Mandal, MB Kanathila, CD Pynn, W Li, J Gao, T Margalith, MA Laurent, ... Semiconductor Science and Technology 33 (6), 065013, 2018 | 19 | 2018 |
Study of synaptic behavior in doped transition metal oxide-based reconfigurable devices S Mandal, B Long, R Jha IEEE transactions on electron devices 60 (12), 4219-4225, 2013 | 16 | 2013 |
Determination of minority carrier lifetime of holes in diamond pin diodes using reverse recovery method M Dutta, S Mandal, R Hathwar, AM Fischer, FAM Koeck, RJ Nemanich, ... IEEE Electron Device Letters 39 (4), 552-555, 2018 | 15 | 2018 |
Discrete-pulsed current time method to estimate channel thermal resistance of GaN-based power devices Z Xu, S Mandal, J Gao, H Surdi, W Li, Y Yamaoka, G Piao, T Tabuchi, H Li, ... IEEE Transactions on Electron Devices 65 (12), 5301-5306, 2018 | 11 | 2018 |
Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces J Gao, M Hao, W Li, Z Xu, S Mandal, R Nemanich, S Chowdhury physica status solidi (a) 215 (5), 1700498, 2018 | 9 | 2018 |
Doped HfO2based nanoelectronic memristive devices for self-learning neural circuits and architecture S Mandal, B Long, A El-Amin, R Jha 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013 | 7 | 2013 |
Understanding the impact of diode parameters on sneak current in 1Diode 1ReRAM crossbar architectures Y Li, B Long, S Mandal, W Chen, R Jha 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013 | 6 | 2013 |
A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN J Gao, W Li, S Mandal, S Chowdhury Wide Bandgap Power Devices and Applications II 10381, 1038103, 2017 | 3 | 2017 |
Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs KM Bhat, S Mandal, S Pathak, GS Saravanan, C Sridhar, SL Badnikar, ... Semiconductor Science and Technology 27 (11), 115013, 2012 | 2 | 2012 |
Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer S Mandal, A Agarwal, E Ahmadi, KM Bhat, MA Laurent, S Keller, ... Wide Bandgap Power Devices and Applications II 10381, 39-45, 2017 | 1 | 2017 |
Nanoelectronic synaptic devices and materials for brain-inspired computational architectures R Jha, S Mandal Nanoepitaxy: Materials and Devices VI 9174, 55-58, 2014 | 1 | 2014 |
Understanding the impact of slow electro-forming in Resistive Random Access Memories B Long, S Mandal, R Jha, A Pronin, PJ Hulbert 2013 IEEE 56th International Midwest Symposium on Circuits and Systems …, 2013 | 1 | 2013 |
Understanding the Role of Dopants in Transition Metal Oxide Dielectrics for Digital and Analog Resistive Switching B Long, S Mandal, Y Li, W Chen, A El-Amin, R Jha ECS Transactions 53 (4), 115, 2013 | 1 | 2013 |