Serdal Okur
Serdal Okur
ams AG
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Cited by
Cited by
Carrier dynamics in bulk GaN
P Šcˇajev, K Jarašiūnas, S Okur, Ü Özgür, H Morkoç
Journal of Applied Physics 111 (2), 023702, 2012
Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques
Y Yao, S Okur, LAM Lyle, GS Tompa, T Salagaj, N Sbrockey, RF Davis, ...
Materials Research Letters 6 (5), 268-275, 2018
HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD
H Sun, KH Li, CGT Castanedo, S Okur, GS Tompa, T Salagaj, S Lopatin, ...
Crystal Growth & Design 18 (4), 2370-2376, 2018
High-speed nonpolar InGaN/GaN LEDs for visible-light communication
A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
IEEE Photonics Technology Letters 29 (4), 381-384, 2017
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
X Li, S Okur, F Zhang, V Avrutin, Ü Özgür, H Morkoç, SM Hong, SH Yen, ...
Journal of Applied Physics 111 (6), 063112, 2012
Laser direct write synthesis of lead halide perovskites
SS Chou, BS Swartzentruber, MT Janish, KC Meyer, LB Biedermann, ...
The Journal of Physical Chemistry Letters 7 (19), 3736-3741, 2016
CoCrMo alloy treated by floating potential plasma assisted nitriding and plasma based ion implantation: Influence of the hydrogen content and of the ion energy on the nitrogen …
L Pichon, S Okur, O Öztürk, JP Riviere, M Drouet
Surface and Coatings Technology 204 (18-19), 2913-2918, 2010
Ballistic transport in InGaN-based LEDs: impact on efficiency
Ü Özgür, X Ni, X Li, J Lee, S Liu, S Okur, V Avrutin, A Matulionis, H Morkoç
Semiconductor science and technology 26 (1), 014022, 2010
Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap
M Toporkov, V Avrutin, S Okur, N Izyumskaya, D Demchenko, J Volk, ...
Journal of crystal growth 402, 60-64, 2014
Structural and magnetic characterization of plasma ion nitrided layer on 316L stainless steel alloy
O Öztürk, S Okur, JP Riviere
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2009
Optical studies of strain and defect distribution in semipolar GaN on patterned Si substrates
N Izyumskaya, F Zhang, S Okur, T Selden, V Avrutin, Ü Özgür, S Metzner, ...
Journal of Applied Physics 114 (11), 113502, 2013
The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes
F Zhang, X Li, S Hafiz, S Okur, V Avrutin, Ü Özgür, H Morkoç, A Matulionis
Applied Physics Letters 103 (5), 051122, 2013
Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)
L Tarnawska, P Zaumseil, MA Schubert, S Okur, U Ozgur, H Morkoç, ...
Journal of Applied Physics 111 (7), 073509, 2012
Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes
S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ...
Optics express 25 (3), 2178-2186, 2017
Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
D Rosales, B Gil, T Bretagnon, B Guizal, F Zhang, S Okur, M Monavarian, ...
Journal of Applied Physics 115 (7), 073510, 2014
Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy
M Nami, RF Eller, S Okur, AK Rishinaramangalam, S Liu, I Brener, ...
Nanotechnology 28 (2), 025202, 2016
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
X Li, S Okur, F Zhang, SA Hafiz, V Avrutin, Ü Özgür, H Morkoç, ...
Applied Physics Letters 101 (4), 041115, 2012
On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer
X Li, F Zhang, S Okur, V Avrutin, SJ Liu, Ü Özgür, H Morkoç, SM Hong, ...
physica status solidi (a) 208 (12), 2907-2912, 2011
Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques
Z Zolnai, M Toporkov, J Volk, DO Demchenko, S Okur, Z Szabó, Ü Özgür, ...
Applied Surface Science 327, 43-50, 2015
Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells
D Rosales, B Gil, T Bretagnon, B Guizal, N Izyumskaya, M Monavarian, ...
Journal of Applied Physics 116 (9), 093517, 2014
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