| Terahertz channel characterization using a broadband frequency comb radiator in 130-nm SiGe BiCMOS S Razavian, M Hosseini, Y Mehta, A Babakhani IEEE Transactions on Terahertz Science and Technology 11 (3), 269-276, 2021 | 11 | 2021 |
| A 140–220-GHz low-noise amplifier with 6-dB minimum noise figure and 80-GHz bandwidth in 130-nm SiGe BiCMOS Y Mehta, S Thomas, A Babakhani IEEE Microwave and Wireless Technology Letters 33 (2), 200-203, 2022 | 10 | 2022 |
| Terahertz gas-phase spectroscopy of CO using a silicon-based picosecond impulse radiator Y Mehta, S Razavian, K Schwarm, RM Spearrin, A Babakhani CLEO: Science and Innovations, SM2F. 7, 2020 | 9 | 2020 |
| Terahertz channel characterization using a silicon-based picosecond pulse source M Hosseini, M Assefzadeh, S Razavian, Y Mehta, A Babakhani 2020 IEEE Radio and Wireless Symposium (RWS), 76-79, 2020 | 7 | 2020 |
| Plasma characterization using a silicon-based terahertz frequency comb radiator S Razavian, J Han, B Jamali, P Pribyl, M Hosseini, Y Mehta, M Forghani, ... IEEE Sensors Letters 4 (9), 1-4, 2020 | 6 | 2020 |
| High speed 0.55 micron BiCMOS family of ASICs Y Mehta, T Wong, A Tam IEEE Proceedings of the Custom Integrated Circuits Conference, 16.2/1-16.2/4, 1990 | | 1990 |
