| Building a six-junction inverted metamorphic concentrator solar cell JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ... IEEE Journal of Photovoltaics 8 (2), 626-632, 2017 | 159 | 2017 |
| III–V multijunction solar cell integration with silicon: Present status, challenges and future outlook N Jain, MK Hudait Energy Harvesting and Systems 1 (3-4), 121-145, 2014 | 104 | 2014 |
| Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element N Shehata, K Meehan, M Hudait, N Jain Journal of Nanoparticle Research 14, 1-10, 2012 | 99 | 2012 |
| Controlled exfoliation of (100) GaAs-based devices by spalling fracture CA Sweet, KL Schulte, JD Simon, MA Steiner, N Jain, DL Young, AJ Ptak, ... Applied Physics Letters 108 (1), 011906, 2016 | 63 | 2016 |
| X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge Y Zhu, N Jain, MK Hudait, D Maurya, R Varghese, S Priya Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 60 | 2014 |
| Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100),(110), and (111) A GaAs substrates MK Hudait, Y Zhu, N Jain, JL Hunter Jr Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013 | 53 | 2013 |
| High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells N Jain, KL Schulte, JF Geisz, DJ Friedman, RM France, EE Perl, ... Applied Physics Letters 112 (5), 053905, 2018 | 45 | 2018 |
| Upright and inverted single-junction GaAs solar cells grown by hydride vapor phase epitaxy J Simon, KL Schulte, N Jain, S Johnston, M Young, MR Young, DL Young, ... IEEE Journal of Photovoltaics 7 (1), 157-161, 2016 | 44 | 2016 |
| Impact of threading dislocations on the design of GaAs and InGaP/GaAs solar cells on Si using finite element analysis N Jain, MK Hudait IEEE Journal of Photovoltaics 3 (1), 528-534, 2012 | 42 | 2012 |
| Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ... Journal of Applied Physics 112 (2), 024306, 2012 | 39 | 2012 |
| Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ... Journal of Applied Physics 112 (9), 094312, 2012 | 38 | 2012 |
| Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors M Clavel, P Goley, N Jain, Y Zhu, MK Hudait IEEE Journal of the Electron Devices Society 3 (3), 184-193, 2015 | 37 | 2015 |
| Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down-and up-conversions N Shehata, K Meehan, I Hassounah, M Hudait, N Jain, M Clavel, S Elhelw, ... Nanoscale research letters 9, 1-6, 2014 | 37 | 2014 |
| Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: Suitability for low-power fin field-effect transistors MK Hudait, M Clavel, P Goley, N Jain, Y Zhu Scientific reports 4 (1), 1-6, 2014 | 35 | 2014 |
| Study of optical and structural characteristics of ceria nanoparticles doped with negative and positive association lanthanide elements N Shehata, K Meehan, M Hudait, N Jain, S Gaballah Journal of Nanomaterials 2014, 156-156, 2014 | 31 | 2014 |
| In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy MK Hudait, Y Zhu, N Jain, S Vijayaraghavan, A Saha, T Merritt, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012 | 30 | 2012 |
| Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy N Jain, JF Geisz, RM France, AG Norman, MA Steiner IEEE Journal of Photovoltaics 7 (3), 927-933, 2017 | 29 | 2017 |
| Development of GaInP solar cells grown by hydride vapor phase epitaxy KL Schulte, J Simon, J Mangum, CE Packard, BP Gorman, N Jain, AJ Ptak IEEE Journal of Photovoltaics 7 (4), 1153-1158, 2017 | 25 | 2017 |
| Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ... Journal of Applied Physics 113 (2), 024319, 2013 | 25 | 2013 |
| Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ... Applied Physics Letters 101 (11), 112106, 2012 | 22 | 2012 |
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPVerified email at vt.edu
