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Nikhil Jain
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Building a six-junction inverted metamorphic concentrator solar cell
JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ...
IEEE Journal of Photovoltaics 8 (2), 626-632, 2017
1592017
III–V multijunction solar cell integration with silicon: Present status, challenges and future outlook
N Jain, MK Hudait
Energy Harvesting and Systems 1 (3-4), 121-145, 2014
1042014
Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element
N Shehata, K Meehan, M Hudait, N Jain
Journal of Nanoparticle Research 14, 1-10, 2012
992012
Controlled exfoliation of (100) GaAs-based devices by spalling fracture
CA Sweet, KL Schulte, JD Simon, MA Steiner, N Jain, DL Young, AJ Ptak, ...
Applied Physics Letters 108 (1), 011906, 2016
632016
X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge
Y Zhu, N Jain, MK Hudait, D Maurya, R Varghese, S Priya
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2014
602014
Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100),(110), and (111) A GaAs substrates
MK Hudait, Y Zhu, N Jain, JL Hunter Jr
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2013
532013
High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells
N Jain, KL Schulte, JF Geisz, DJ Friedman, RM France, EE Perl, ...
Applied Physics Letters 112 (5), 053905, 2018
452018
Upright and inverted single-junction GaAs solar cells grown by hydride vapor phase epitaxy
J Simon, KL Schulte, N Jain, S Johnston, M Young, MR Young, DL Young, ...
IEEE Journal of Photovoltaics 7 (1), 157-161, 2016
442016
Impact of threading dislocations on the design of GaAs and InGaP/GaAs solar cells on Si using finite element analysis
N Jain, MK Hudait
IEEE Journal of Photovoltaics 3 (1), 528-534, 2012
422012
Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ...
Journal of Applied Physics 112 (2), 024306, 2012
392012
Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ...
Journal of Applied Physics 112 (9), 094312, 2012
382012
Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors
M Clavel, P Goley, N Jain, Y Zhu, MK Hudait
IEEE Journal of the Electron Devices Society 3 (3), 184-193, 2015
372015
Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down-and up-conversions
N Shehata, K Meehan, I Hassounah, M Hudait, N Jain, M Clavel, S Elhelw, ...
Nanoscale research letters 9, 1-6, 2014
372014
Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: Suitability for low-power fin field-effect transistors
MK Hudait, M Clavel, P Goley, N Jain, Y Zhu
Scientific reports 4 (1), 1-6, 2014
352014
Study of optical and structural characteristics of ceria nanoparticles doped with negative and positive association lanthanide elements
N Shehata, K Meehan, M Hudait, N Jain, S Gaballah
Journal of Nanomaterials 2014, 156-156, 2014
312014
In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy
MK Hudait, Y Zhu, N Jain, S Vijayaraghavan, A Saha, T Merritt, ...
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2012
302012
Enhanced current collection in 1.7 eV GaInAsP solar cells grown on GaAs by metalorganic vapor phase epitaxy
N Jain, JF Geisz, RM France, AG Norman, MA Steiner
IEEE Journal of Photovoltaics 7 (3), 927-933, 2017
292017
Development of GaInP solar cells grown by hydride vapor phase epitaxy
KL Schulte, J Simon, J Mangum, CE Packard, BP Gorman, N Jain, AJ Ptak
IEEE Journal of Photovoltaics 7 (4), 1153-1158, 2017
252017
Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ...
Journal of Applied Physics 113 (2), 024319, 2013
252013
Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure
Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ...
Applied Physics Letters 101 (11), 112106, 2012
222012
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