Follow
PIL SUNG PARK
PIL SUNG PARK
Technology Development Center, Samsung Electronics
Verified email at osu.edu
Title
Cited by
Cited by
Year
Large area single crystal (0001) oriented MoS2
MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ...
Applied Physics Letters 102 (25), 2013
2682013
Polarization-engineered GaN/InGaN/GaN tunnel diodes
S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan
Applied Physics Letters 97 (20), 2010
1932010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 100 (11), 2012
1782012
Low resistance GaN/InGaN/GaN tunnel junctions
S Krishnamoorthy, F Akyol, PS Park, S Rajan
Applied Physics Letters 102 (11), 2013
1562013
N-polar III–nitride green (540 nm) light emitting diode
F Akyol, DN Nath, E Gür, PS Park, S Rajan
Japanese Journal of Applied Physics 50 (5R), 052101, 2011
1052011
Interface charge engineering for enhancement-mode GaN MISHEMTs
TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan
IEEE Electron Device Letters 35 (3), 312-314, 2014
1022014
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ...
Applied Physics Letters 102 (7), 2013
1022013
Simulation of short-channel effects in N-and Ga-polar AlGaN/GaN HEMTs
PS Park, S Rajan
IEEE Transactions on Electron Devices 58 (3), 704-708, 2011
1012011
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...
Applied Physics Letters 107 (15), 2015
872015
GdN nanoisland-based GaN tunnel junctions
S Krishnamoorthy, TF Kent, J Yang, PS Park, RC Myers, S Rajan
Nano letters 13 (6), 2570-2575, 2013
862013
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
832017
Demonstration of forward inter-band tunneling in GaN by polarization engineering
S Krishnamoorthy, PS Park, S Rajan
Applied Physics Letters 99 (23), 2011
802011
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan
Applied Physics Letters 103 (2), 2013
662013
Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
P Sung Park, DN Nath, S Krishnamoorthy, S Rajan
Applied Physics Letters 100 (6), 2012
612012
Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3
TH Hung, K Sasaki, A Kuramata, DN Nath, P Sung Park, C Polchinski, ...
Applied Physics Letters 104 (16), 2014
562014
Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion
P Sung Park, KM Reddy, DN Nath, Z Yang, NP Padture, S Rajan
Applied Physics Letters 102 (15), 2013
362013
Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs
PS Park, S Krishnamoorthy, S Bajaj, DN Nath, S Rajan
IEEE Electron Device Letters 36 (3), 226-228, 2015
272015
Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures
PS Park, DN Nath, S Rajan
IEEE Electron Device Letters 33 (7), 991-993, 2012
242012
Polarization engineered 1-dimensional electron gas arrays
DN Nath, PS Park, M Esposto, D Brown, S Keller, UK Mishra, S Rajan
Journal of Applied Physics 111 (4), 2012
112012
III-nitride tunnel diodes with record forward tunnel current density
S Krishnamoorthy, PS Park, S Rajan
69th Device Research Conference, 1-2, 2011
52011
The system can't perform the operation now. Try again later.
Articles 1–20