| Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013 | 271 | 2013 |
| Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010 | 193 | 2010 |
| Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012 | 178 | 2012 |
| Low resistance GaN/InGaN/GaN tunnel junctions S Krishnamoorthy, F Akyol, PS Park, S Rajan Applied Physics Letters 102 (11), 2013 | 155 | 2013 |
| N-polar III–nitride green (540 nm) light emitting diode F Akyol, DN Nath, E Gür, PS Park, S Rajan Japanese Journal of Applied Physics 50 (5R), 052101, 2011 | 105 | 2011 |
| Interface charge engineering for enhancement-mode GaN MISHEMTs TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan IEEE Electron Device Letters 35 (3), 312-314, 2014 | 104 | 2014 |
| Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ... Applied Physics Letters 102 (7), 2013 | 103 | 2013 |
| Simulation of short-channel effects in N-and Ga-polar AlGaN/GaN HEMTs PS Park, S Rajan IEEE Transactions on Electron Devices 58 (3), 704-708, 2011 | 101 | 2011 |
| Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015 | 89 | 2015 |
| Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017 | 86 | 2017 |
| GdN nanoisland-based GaN tunnel junctions S Krishnamoorthy, TF Kent, J Yang, PS Park, RC Myers, S Rajan Nano letters 13 (6), 2570-2575, 2013 | 86 | 2013 |
| Demonstration of forward inter-band tunneling in GaN by polarization engineering S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 99 (23), 2011 | 80 | 2011 |
| Unipolar vertical transport in GaN/AlGaN/GaN heterostructures DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan Applied Physics Letters 103 (2), 2013 | 67 | 2013 |
| Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization P Sung Park, DN Nath, S Krishnamoorthy, S Rajan Applied Physics Letters 100 (6), 2012 | 63 | 2012 |
| Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3 TH Hung, K Sasaki, A Kuramata, DN Nath, P Sung Park, C Polchinski, ... Applied Physics Letters 104 (16), 2014 | 57 | 2014 |
| Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion P Sung Park, KM Reddy, DN Nath, Z Yang, NP Padture, S Rajan Applied Physics Letters 102 (15), 2013 | 37 | 2013 |
| Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs PS Park, S Krishnamoorthy, S Bajaj, DN Nath, S Rajan IEEE Electron Device Letters 36 (3), 226-228, 2015 | 27 | 2015 |
| Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures PS Park, DN Nath, S Rajan IEEE Electron Device Letters 33 (7), 991-993, 2012 | 25 | 2012 |
| Polarization engineered 1-dimensional electron gas arrays DN Nath, PS Park, M Esposto, D Brown, S Keller, UK Mishra, S Rajan Journal of Applied Physics 111 (4), 2012 | 11 | 2012 |
| III-nitride tunnel diodes with record forward tunnel current density S Krishnamoorthy, PS Park, S Rajan 69th Device Research Conference, 1-2, 2011 | 5 | 2011 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
