Stefan Cosemans
Stefan Cosemans
Principal member of technical staff, imec
Geverifieerd e-mailadres voor imec.be
TitelGeciteerd doorJaar
Dynamic ‘hour glass’ model for SET and RESET in HfO< inf> 2</inf> RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
VLSI Technology (VLSIT), 2012 Symposium on, 75-76, 2012
942012
Spin-Hall-assisted magnetic random access memory
A Van den Brink, S Cosemans, S Cornelissen, M Manfrini, A Vaysset, ...
Applied Physics Letters 104 (1), 012403, 2014
612014
A low-power embedded SRAM for wireless applications
S Cosemans, W Dehaene, F Catthoor
Solid-State Circuits, IEEE Journal of 42 (7), 1607-1617, 2007
502007
The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
K Martens, IP Radu, S Mertens, X Shi, L Nyns, S Cosemans, P Favia, ...
Journal of Applied Physics 112 (12), 124501, 2012
452012
A 3.6 pJ/Access 480 MHz, 128 kb on-chip SRAM with 850 MHz boost mode in 90 nm CMOS with tunable sense amplifiers
S Cosemans, W Dehaene, F Catthoor
Solid-State Circuits, IEEE Journal of 44 (7), 2065-2077, 2009
432009
Time and workload dependent device variability in circuit simulations
D Rodopoulos, SB Mahato, VV de Almeida Camargo, B Kaczer, ...
2011 IEEE International Conference on IC Design & Technology, 1-4, 2011
422011
Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design
L Zhang, S Cosemans, DJ Wouters, B Govoreanu, G Groeseneken, ...
2013 5th IEEE International Memory Workshop, 155-158, 2013
322013
A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, ultra low leakage power memory using dynamic cell stability and a dual swing data link
B Rooseleer, S Cosemans, W Dehaene
ESSCIRC (ESSCIRC), 2011 Proceedings of the, 519-522, 2011
322011
High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability …
L Zhang, B Govoreanu, A Redolfi, D Crotti, H Hody, V Paraschiv, ...
2014 IEEE International Electron Devices Meeting, 6.8. 1-6.8. 4, 2014
312014
Selector design considerations and requirements for 1 SIR RRAM crossbar array
L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ...
2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014
282014
One-selector one-resistor cross-point array with threshold switching selector
L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ...
IEEE Transactions on Electron Devices 62 (10), 3250-3257, 2015
272015
Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10nm CMOS
O Zografos, B Sorée, A Vaysset, S Cosemans, L Amaru, PE Gaillardon, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 686-689, 2015
262015
Hourglass concept for RRAM: a dynamic and statistical device model
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
252014
A 4.4 pJ/Access 80 MHz, 128 kbit Variability Resilient SRAM With Multi-Sized Sense Amplifier Redundancy
V Sharma, S Cosemans, M Ashouei, J Huisken, F Catthoor, W Dehaene
Solid-State Circuits, IEEE Journal of, 1-1, 2011
242011
Modular sub-wavelength diffractive light modulator for high-definition holographic displays
R Stahl, V Rochus, X Rottenberg, S Cosemans, L Haspeslagh, S Severi, ...
Journal of Physics: Conference Series 415 (1), 012057, 2013
232013
A 3.6 pJ/access 480MHz, 128Kbit on-chip SRAM with 850MHz boost mode in 90nm CMOS with tunable sense amplifiers to cope with variability
S Cosemans, W Dehaene, F Catthoor
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European, 278-281, 2008
222008
Method for improving writability of sram memory
V Sharma, S Cosemans, W Dehaene, F Catthoor, M Ashouei, J Huisken
US Patent App. 13/231,727, 2012
202012
Embedded SRAM design in deep deep submicron technologies
W Dehaene, S Cosemans, A Vignon, F Catthoor, P Geens
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European, 384-391, 2007
182007
On the optimal ON/OFF resistance ratio for resistive switching element in one-selector one-resistor crosspoint arrays
L Zhang, S Cosemans, DJ Wouters, G Groeseneken, M Jurczak, ...
IEEE Electron Device Letters 36 (6), 570-572, 2015
172015
Variability-aware design of low power SRAM memories
S Cosemans
Katholieke Universiteit Leuven, 2009
172009
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Artikelen 1–20