| Semiconductor device and method of manufacturing thereof A Humbert, R Hoofman US Patent App. 12/514,214, 2010 | 403 | 2010 |
| Highly mobile electrons and holes on isolated chains of the semiconducting polymer poly (phenylene vinylene) RJOM Hoofman, MP De Haas, LDA Siebbeles, JM Warman Nature 392 (6671), 54-56, 1998 | 377 | 1998 |
| Challenges in the implementation of low-k dielectrics in the back-end of line R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ... Microelectronic Engineering 80, 337-344, 2005 | 147 | 2005 |
| The formation and recombination kinetics of positively charged poly (phenylene vinylene) chains in pulse-irradiated dilute solutions FC Grozema, RJOM Hoofman, LP Candeias, MP de Haas, JM Warman, ... The Journal of Physical Chemistry A 107 (31), 5976-5986, 2003 | 70 | 2003 |
| Moisture influence on porous low-k reliability J Michelon, RJOM Hoofman IEEE Transactions on Device and Materials Reliability 6 (2), 169-174, 2006 | 67 | 2006 |
| Anisotropy of the charge-carrier mobility in polydiacetylene crystals RJOM Hoofman, LDA Siebbeles, MP de Haas, A Hummel, D Bloor The Journal of chemical physics 109 (5), 1885-1893, 1998 | 49 | 1998 |
| Advanced Cu interconnects using air gaps LG Gosset, A Farcy, J De Pontcharra, P Lyan, R Daamen, G Verheijden, ... Microelectronic engineering 82 (3-4), 321-332, 2005 | 45 | 2005 |
| CMOS biosensor platform F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ... 2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010 | 41 | 2010 |
| Etch and strip induced material modification of porous low-k (k= 2.2) dielectric Y Furukawa, R Wolters, H Roosen, JHM Snijders, R Hoofman Microelectronic engineering 76 (1-4), 25-31, 2004 | 40 | 2004 |
| Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process VH Nguyen, R Daamen, R Hoofman Microelectronic Engineering 76 (1-4), 95-99, 2004 | 40 | 2004 |
| The evolution of multi-level air gap integration towards 32 nm node interconnects R Daamen, PHL Bancken, VH Nguyen, A Humbert, G Verheijden, ... Microelectronic engineering 84 (9-10), 2177-2183, 2007 | 34 | 2007 |
| General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material LG Gosset, V Arnal, C Prindle, R Hoofman, G Verheijden, R Daamen, ... Proceedings of the IEEE 2003 International Interconnect Technology …, 2003 | 28 | 2003 |
| Void growth modeling upon electromigration stressing in narrow copper lines D Tio Castro, R Hoofman, J Michelon, DJ Gravesteijn, C Bruynseraede Journal of Applied Physics 102 (12), 2007 | 27 | 2007 |
| Influence of backbone conformation on the photoconductivity of polydiacetylene chains RJOM Hoofman, GH Gelinck, LDA Siebbeles, MP de Haas, JM Warman, ... Macromolecules 33 (25), 9289-9297, 2000 | 27 | 2000 |
| Intrusion protection using stress changes R Hoofman, RHW Pijnenburg, YV Ponomarev US Patent 8,330,191, 2012 | 25 | 2012 |
| Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects Z Tokei, V Sutcliffe, S Demuynck, F Iacopi, P Roussel, GP Beyer, ... 2004 IEEE International Reliability Physics Symposium. Proceedings, 326-332, 2004 | 25 | 2004 |
| Humidity sensor based on progressive corrosion of exposed material A Humbert, YV Ponomarev, M Merz, R Hoofman US Patent 8,683,861, 2014 | 24 | 2014 |
| Air gap formation by UV-assisted decomposition of CVD material M Pantouvaki, A Humbert, E VanBesien, E Camerotto, Y Travaly, ... Microelectronic Engineering 85 (10), 2071-2074, 2008 | 24 | 2008 |
| Sensor calibration in an rfid tag A Humbert, G Curatola, M Merz, RHW Pijenburg, R Hoofman, ... US Patent App. 12/992,824, 2011 | 21 | 2011 |
| Prediction of thermo-mechanical integrity of wafer backend processes V Gonda, JMJ Den Toonder, J Beijer, GQ Zhang, WD van Driel, ... Microelectronics Reliability 44 (12), 2011-2017, 2004 | 21 | 2004 |
Laurens SiebbelesDelft University of TechnologyVerified email at tudelft.nl
