Romano Hoofman
Romano Hoofman
Strategic Development Director at imec
Verified email at
Cited by
Cited by
Semiconductor device and method of manufacturing thereof
A Humbert, R Hoofman
US Patent App. 12/514,214, 2010
Highly mobile electrons and holes on isolated chains of the semiconducting polymer poly (phenylene vinylene)
RJOM Hoofman, MP De Haas, LDA Siebbeles, JM Warman
Nature 392 (6671), 54-56, 1998
Challenges in the implementation of low-k dielectrics in the back-end of line
R Hoofman, G Verheijden, J Michelon, F Iacopi, Y Travaly, MR Baklanov, ...
Microelectronic Engineering 80, 337-344, 2005
The formation and recombination kinetics of positively charged poly (phenylene vinylene) chains in pulse-irradiated dilute solutions
FC Grozema, RJOM Hoofman, LP Candeias, MP de Haas, JM Warman, ...
The Journal of Physical Chemistry A 107 (31), 5976-5986, 2003
Moisture influence on porous low-k reliability
J Michelon, RJOM Hoofman
IEEE Transactions on Device and Materials Reliability 6 (2), 169-174, 2006
Anisotropy of the charge-carrier mobility in polydiacetylene crystals
RJOM Hoofman, LDA Siebbeles, MP de Haas, A Hummel, D Bloor
The Journal of chemical physics 109 (5), 1885-1893, 1998
Advanced Cu interconnects using air gaps
LG Gosset, A Farcy, J De Pontcharra, P Lyan, R Daamen, G Verheijden, ...
Microelectronic engineering 82 (3-4), 321-332, 2005
CMOS biosensor platform
F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ...
2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010
Etch and strip induced material modification of porous low-k (k= 2.2) dielectric
Y Furukawa, R Wolters, H Roosen, JHM Snijders, R Hoofman
Microelectronic engineering 76 (1-4), 25-31, 2004
Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process
VH Nguyen, R Daamen, R Hoofman
Microelectronic Engineering 76 (1-4), 95-99, 2004
The evolution of multi-level air gap integration towards 32 nm node interconnects
R Daamen, PHL Bancken, VH Nguyen, A Humbert, G Verheijden, ...
Microelectronic engineering 84 (9-10), 2177-2183, 2007
General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material
LG Gosset, V Arnal, C Prindle, R Hoofman, G Verheijden, R Daamen, ...
Proceedings of the IEEE 2003 International Interconnect Technology …, 2003
Void growth modeling upon electromigration stressing in narrow copper lines
D Tio Castro, R Hoofman, J Michelon, DJ Gravesteijn, C Bruynseraede
Journal of Applied Physics 102 (12), 2007
Influence of backbone conformation on the photoconductivity of polydiacetylene chains
RJOM Hoofman, GH Gelinck, LDA Siebbeles, MP de Haas, JM Warman, ...
Macromolecules 33 (25), 9289-9297, 2000
Intrusion protection using stress changes
R Hoofman, RHW Pijnenburg, YV Ponomarev
US Patent 8,330,191, 2012
Humidity sensor based on progressive corrosion of exposed material
A Humbert, YV Ponomarev, M Merz, R Hoofman
US Patent 8,683,861, 2014
Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects
Z Tokei, V Sutcliffe, S Demuynck, F Iacopi, P Roussel, GP Beyer, ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 326-332, 2004
Air gap formation by UV-assisted decomposition of CVD material
M Pantouvaki, A Humbert, E VanBesien, E Camerotto, Y Travaly, ...
Microelectronic Engineering 85 (10), 2071-2074, 2008
Sensor calibration in an rfid tag
A Humbert, G Curatola, M Merz, RHW Pijenburg, R Hoofman, ...
US Patent App. 12/992,824, 2011
Prediction of thermo-mechanical integrity of wafer backend processes
V Gonda, JMJ Den Toonder, J Beijer, GQ Zhang, WD van Driel, ...
Microelectronics Reliability 44 (12), 2011-2017, 2004
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