Raymond J.E. Hueting
Cited by
Cited by
The charge plasma PN diode
RJE Hueting, B Rajasekharan, C Salm, J Schmitz
IEEE electron device letters 29 (12), 1367-1369, 2008
Fabrication and characterization of the charge-plasma diode
B Rajasekharan, RJE Hueting, C Salm, T Van Hemert, RAM Wolters, ...
IEEE electron device letters 31 (6), 528-530, 2010
Cellular trench-gate field-effect transistors
EA Hijzen, RJE Hueting
US Patent 6,359,308, 2002
Trenched schottky rectifiers
EA Hijzen, RJE Hueting
US Patent 6,441,454, 2002
Electrostatic doping in semiconductor devices
G Gupta, B Rajasekharan, RJE Hueting
IEEE transactions on electron devices 64 (8), 3044-3055, 2017
A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications
JA van der Pol, AW Ludikhuize, HGA Huizing, B Van Velzen, RJE Hueting, ...
12th International Symposium on Power Semiconductor Devices & ICs …, 2000
Gate-drain charge analysis for switching in power trench MOSFETs
RJE Hueting, EA Hijzen, A Heringa, AW Ludikhuize, MAA Zandt
IEEE Transactions on Electron Devices 51 (8), 1323-1330, 2004
On the optimization of SiGe-base bipolar transistors
RJE Hueting, JW Slotboom, A Pruijmboom, WB De Boer, CE Timmering, ...
IEEE Transactions on Electron Devices 43 (9), 1518-1524, 1996
RESURF stepped oxide (RSO) MOSFET for 85V having a record-low specific on-resistance
GEJ Koops, EA Hijzen, RJE Hueting, MAA Zandt
Proc. ISPSD, 185-188, 2004
Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations
JLPJ van der Steen, D Esseni, P Palestri, L Selmi, RJE Hueting
IEEE transactions on electron devices 54 (8), 1843-1851, 2007
Edge termination in MOS transistors
RJE Hueting, EA Hijzen
US Patent 6,936,890, 2005
Trench semiconductor device manufacture with a thicker upper insulating layer
RJE Hueting, CE Timmering, HGR Maas
US Patent 6,319,777, 2001
Trench-gate semiconductor devices and their manufacture
GAM Hurkx, RJE Hueting
US Patent 6,541,817, 2003
On the trade-off between quality factor and tuning ratio in tunable high-frequency capacitors
MPJ Tiggelman, K Reimann, F Van Rijs, J Schmitz, RJE Hueting
IEEE transactions on Electron Devices 56 (9), 2128-2136, 2009
Field-effect semiconductor devices
RJE Hueting, EA Hijzen, R Van Dalen
US Patent 6,600,194, 2003
Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems
A Pruijmboom, D Terpstra, CE Timmering, WB De Boer, MJJ Theunissen, ...
Proceedings of International Electron Devices Meeting, 747-750, 1995
Trench insulated gate field effect transistor
RJE Hueting
US Patent 7,408,223, 2008
Switching performance of low-voltage N-channel trench MOSFETs
RJE Hueting, EA Hijzen, AW Ludikhuize
Proceedings of the 14th International Symposium on Power Semiconductor …, 2002
Electronic device comprising a trench gate field effect device
RJE Hueting, AR Brown, H Schligtenhorst, M Gajda, SW Hodgskiss
US Patent 6,320,223, 2001
Method of manufacturing a trench gate field effect semiconductor device
AR Brown, RJE Hueting, GAM Hurkx
US Patent 6,331,467, 2001
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