| Atomic layer deposition of ruthenium with TiN interface for sub-10 nm advanced interconnects beyond copper LG Wen, P Roussel, OV Pedreira, B Briggs, B Groven, S Dutta, ... ACS applied materials & interfaces 8 (39), 26119-26125, 2016 | 105 | 2016 |
| Influence of absorbed water components on SiOCH low-k reliability Y Li, I Ciofi, L Carbonell, N Heylen, J Van Aelst, MR Baklanov, ... Journal of Applied Physics 104 (3), 2008 | 104 | 2008 |
| Impact of Wire Geometry on Interconnect RC and Circuit Delay I Ciofi, A Contino, PJ Roussel, R Baert, VH Vega-Gonzalez, K Croes, ... IEEE Transactions on Electron Devices 63 (6), 2488-2496, 2016 | 101 | 2016 |
| High-aspect-ratio ruthenium lines for buried power rail A Gupta, S Kundu, L Teugels, J Bommels, C Adelmann, N Heylen, ... 2018 IEEE International Interconnect Technology Conference (IITC), 4-6, 2018 | 61 | 2018 |
| Modeling of via resistance for advanced technology nodes I Ciofi, PJ Roussel, Y Saad, V Moroz, CY Hu, R Baert, K Croes, A Contino, ... IEEE transactions on Electron Devices 64 (5), 2306-2313, 2017 | 61 | 2017 |
| Capacitance measurements and k-value extractions of low-k films I Ciofi, MR Baklanov, Z Tőkei, GP Beyer Microelectronic Engineering 87 (11), 2391-2406, 2010 | 59 | 2010 |
| Vertical device architecture for 5nm and beyond: device & circuit implications AVY Thean, D Yakimets, TH Bao, P Schuddinck, S Sakhare, MG Bardon, ... 2015 Symposium on VLSI Technology (VLSI Technology), T26-T27, 2015 | 56 | 2015 |
| Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance F Goethals, I Ciofi, O Madia, K Vanstreels, MR Baklanov, C Detavernier, ... Journal of Materials Chemistry 22 (17), 8281-8286, 2012 | 56 | 2012 |
| Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies TH Bao, D Yakimets, J Ryckaert, I Ciofi, R Baert, A Veloso, J Boemmels, ... 2014 44th European Solid State Device Research Conference (ESSDERC), 102-105, 2014 | 47 | 2014 |
| RC Benefits of Advanced Metallization Options I Ciofi, PJ Roussel, R Baert, A Contino, A Gupta, K Croes, CJ Wilson, ... IEEE transactions on electron devices 66 (5), 2339-2345, 2019 | 42 | 2019 |
| Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC MO De Beeck, J Versluijs, V Wiaux, T Vandeweyer, I Ciofi, H Struyf, ... Optical Microlithography XX 6520, 221-233, 2007 | 39 | 2007 |
| Influence of porosity on dielectric breakdown of ultralow-k dielectrics K Vanstreels, I Ciofi, Y Barbarin, M Baklanov Journal of Vacuum Science & Technology B 31 (5), 2013 | 28 | 2013 |
| A new procedure to seal the pores of mesoporous low-k films with precondensed organosilica oligomers F Goethals, MR Baklanov, I Ciofi, C Detavernier, P Van Der Voort, ... Chemical communications 48 (22), 2797-2799, 2012 | 23 | 2012 |
| IEEE transactions on Electron Devices I Ciofi IEEE transactions on Electron Devices 64 (5), 2306-2313, 2017 | 21 | 2017 |
| Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform VMB Carballo, J Bekaert, M Mao, BK Kotowska, S Larivière, I Ciofi, ... Extreme Ultraviolet (EUV) Lithography VIII 10143, 241-250, 2017 | 21 | 2017 |
| On-chip interconnect trends, challenges and solutions: how to keep RC and reliability under control Z Tőkei, I Ciofi, P Roussel, P Debacker, P Raghavan, MH Van Der Veen, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 21 | 2016 |
| Alternative metals: from ab initio screening to calibrated narrow line models C Adelmann, K Sankaran, S Dutta, A Gupta, S Kundu, G Jamieson, ... 2018 IEEE International Interconnect Technology Conference (IITC), 154-156, 2018 | 20 | 2018 |
| Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck Z Tőkei, V Vega, G Murdoch, M O’Toole, K Croes, R Baert, ... 2020 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2020 | 19 | 2020 |
| Evaluation of a new advanced low-k material EA Smirnov, K Vanstreels, P Verdonck, I Ciofi, D Shamiryan, ... Japanese Journal of Applied Physics 50 (5S1), 05EB03, 2011 | 19 | 2011 |
| Water and copper contamination in SiOC: H damascene: Novel characterization methodology based on triangular voltage sweep measurements I Ciofi, Z Tokei, D Visalli, M Van Hove 2006 International Interconnect Technology Conference, 181-183, 2006 | 19 | 2006 |
