David R Hughart
David R Hughart
Verified email at sandia.gov
Title
Cited by
Cited by
Year
Resistive memory device requirements for a neural algorithm accelerator
S Agarwal, SJ Plimpton, DR Hughart, AH Hsia, I Richter, JA Cox, ...
2016 International Joint Conference on Neural Networks (IJCNN), 929-938, 2016
1072016
Defect Interactions ofin: Implications for ELDRS and Latent Interface Trap Buildup
BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides
IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010
502010
A Comparison of the Radiation Response of and Memristors
DR Hughart, AJ Lohn, PR Mickel, SM Dalton, PE Dodd, MR Shaneyfelt, ...
IEEE Transactions on Nuclear Science 60 (6), 4512-4519, 2013
412013
Achieving ideal accuracies in analog neuromorphic computing using periodic carry
S Agarwal, RBJ Gedrim, AH Hsia, DR Hughart, EJ Fuller, AA Talin, ...
2017 Symposium on VLSI Technology, T174-T175, 2017
362017
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing
DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
362012
A CMOS compatible, forming free TaOx ReRAM
AJ Lohn, JE Stevens, PR Mickel, DR Hughart, MJ Marinella
ECS Transactions 58 (5), 59, 2013
242013
Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling
IG Batyrev, D Hughart, R Durand, M Bounasser, BR Tuttle, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 55 (6), 3039-3045, 2008
212008
Impact of linearity and write noise of analog resistive memory devices in a neural algorithm accelerator
RB Jacobs-Gedrim, S Agarwal, KE Knisely, JE Stevens, ...
2017 IEEE International Conference on Rebooting Computing (ICRC), 1-10, 2017
182017
Mechanisms of interface trap buildup and annealing during elevated temperature irradiation
DR Hughart, RD Schrimpf, DM Fleetwood, BR Tuttle, ST Pantelides
IEEE Transactions on Nuclear Science 58 (6), 2930-2936, 2011
182011
Low dose rate test results of National Semiconductor's ELDRS-free bipolar amplifier LM124 and comparators LM139 and LM193
K Kruckmeyer, L McGee, B Brown, D Hughart
2008 IEEE Radiation Effects Data Workshop, 110-117, 2008
172008
The Susceptibility of-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose
ML McLain, HP Hjalmarson, TJ Sheridan, PR Mickel, D Hanson, ...
IEEE Transactions on Nuclear Science 61 (6), 2997-3004, 2014
162014
Total ionizing dose and displacement damage effects on TaOx memristive memories
DR Hughart, SM Dalton, PR Mickel, PE Dodd, MR Shaneyfelt, E Bielejec, ...
2013 IEEE Aerospace Conference, 1-10, 2013
142013
Effects of ionizing radiation on TaOx-based memristive devices
M McLain, D Hughart, D Hanson, M Marinella
2014 IEEE Aerospace Conference, 1-9, 2014
132014
Performance and reliability characterization of 1200 v silicon carbide power mosfets at high temperatures
RJ Kaplar, DR Hughart, S Atcitty, JD Flicker, S DasGupta, MJ Marinella
Additional Papers and Presentations 2013 (HITEN), 000275-000280, 2013
112013
The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors
DR Hughart, RD Schrimpf, DM Fleetwood, XJ Chen, HJ Barnaby, ...
IEEE Transactions on Nuclear Science 56 (6), 3361-3366, 2009
112009
ROSS SIM
S Agarwal, SJ Plimpton, RL Schiek, I Richter, AH Hsia, DR Hughart, ...
82017
Radiation-induced resistance changes in TaOx and TiO2 memristors
DR Hughart, AJ Lohn, PR Mickel, PE Dodd, MR Shaneyfelt, AI Silva, ...
2014 IEEE Aerospace Conference, 1-11, 2014
82014
Progress in SiC MOSFET reliability
DR Hughart, JD Flicker, S DasGupta, S Atcitty, RJ Kaplar, MJ Marinella
ECS Transactions 58 (4), 211, 2013
82013
Training a Neural Network on Analog TaOx ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim
RB Jacobs-Gedrim, DR Hughart, S Agarwal, G Vizkelethy, ES Bielejec, ...
IEEE Transactions on Nuclear Science 66 (1), 54-60, 2018
72018
Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels inMemristors
DR Hughart, JL Pacheco, AJ Lohn, PR Mickel, E Bielejec, G Vizkelethy, ...
IEEE Transactions on Nuclear Science 61 (6), 2965-2971, 2014
72014
The system can't perform the operation now. Try again later.
Articles 1–20