Terrance O'Regan
Terrance O'Regan
Electrical Engineer, U.S. Army research Laboratory
Geverifieerd e-mailadres voor mail.mil
Geciteerd door
Geciteerd door
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
M Amani, ML Chin, AG Birdwell, TP O’Regan, S Najmaei, Z Liu, ...
Applied Physics Letters 102 (19), 193107, 2013
Temperature-dependent phonon shifts in monolayer MoS2
NA Lanzillo, A Glen Birdwell, M Amani, FJ Crowne, PB Shah, S Najmaei, ...
Applied Physics Letters 103 (9), 093102, 2013
Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length
MV Fischetti, TP O'Regan, S Narayanan, C Sachs, S Jin, J Kim, Y Zhang
IEEE Transactions on Electron Devices 54 (9), 2116-2136, 2007
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
Electrical transport properties of polycrystalline monolayer molybdenum disulfide
S Najmaei, M Amani, ML Chin, Z Liu, AG Birdwell, TP O’Regan, ...
ACS nano 8 (8), 7930-7937, 2014
Theoretical study on strain-induced variations in electronic properties of monolayer MoS2
L Dong, RR Namburu, TP O’Regan, M Dubey, AM Dongare
Journal of Materials Science 49 (19), 6762-6771, 2014
Calculation of the electron mobility in III-V inversion layers with high- dielectrics
TP O’Regan, MV Fischetti, B Sorée, S Jin, W Magnus, M Meuris
Journal of Applied Physics 108 (10), 103705, 2010
Modeling the capacitance-voltage response of metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
TP O’Regan, PK Hurley, B Sorée, MV Fischetti
Applied Physics Letters 96 (21), 213514, 2010
Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications
PB Shah, M Amani, ML Chin, TP O’regan, FJ Crowne, M Dubey
Solid-state electronics 91, 87-90, 2014
A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures
J Lin, L Walsh, G Hughes, JC Woicik, IM Povey, TP O'Regan, PK Hurley
Journal of Applied Physics 116 (2), 024104, 2014
Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets
L Dong, AM Dongare, RR Namburu, TP O'Regan, M Dubey
Applied Physics Letters 104 (5), 053107, 2014
Blueshift of the A-exciton peak in folded monolayer 1 H-MoS 2
FJ Crowne, M Amani, AG Birdwell, ML Chin, TP O’Regan, S Najmaei, ...
Physical Review B 88 (23), 235302, 2013
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
W Cabrera, B Brennan, H Dong, TP O'Regan, IM Povey, S Monaghan, ...
Applied Physics Letters 104 (1), 011601, 2014
Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system
ML Chin, P Periasamy, TP O'Regan, M Amani, C Tan, RP O'Hayre, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
Electrically active interface defects in the In0. 53Ga0. 47As MOS system
V Djara, TP O’Regan, K Cherkaoui, M Schmidt, S Monaghan, É O’Connor, ...
Microelectronic engineering 109, 182-188, 2013
Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high- insulators
Y Zhang, MV Fischetti, B Sorée, T O’Regan
Journal of Applied Physics 108 (12), 123713, 2010
Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures
TP O’Regan, PK Hurley
Applied Physics Letters 99 (16), 163502, 2011
Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain
L Dong, J Wang, R Namburu, TP O'Regan, M Dubey, AM Dongare
Journal of Applied Physics 117 (24), 244303, 2015
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN
TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 051602, 2017
Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain
NA Lanzillo, TP O’Regan, SK Nayak
Computational Materials Science 112, 377-382, 2016
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