| NEMO5: A parallel multiscale nanoelectronics modeling tool S Steiger, M Povolotskyi, HH Park, T Kubis, G Klimeck IEEE Transactions on Nanotechnology 10 (6), 1464-1474, 2011 | 215 | 2011 |
| Efficient and realistic device modeling from atomic detail to the nanoscale JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ... Journal of Computational Electronics 12 (4), 592-600, 2013 | 120 | 2013 |
| Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution YP Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck Physical Review B 92 (8), 085301, 2015 | 72 | 2015 |
| Carrier-confinement effects in nanocolumnar Ga N∕ Al x Ga 1− x N quantum disks grown by molecular-beam epitaxy J Ristić, C Rivera, E Calleja, S Fernández-Garrido, M Povoloskyi, ... Physical Review B 72 (8), 085330, 2005 | 71 | 2005 |
| Transferable tight-binding model for strained group IV and III-V materials and heterostructures Y Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck Physical Review B 94 (4), 045311, 2016 | 68 | 2016 |
| Engineering Nanowire n-MOSFETs at SR Mehrotra, SG Kim, T Kubis, M Povolotskyi, MS Lundstrom, G Klimeck IEEE Transactions on Electron Devices 60 (7), 2171-2177, 2013 | 56 | 2013 |
| Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness M Povolotskyi, A Di Carlo Journal of Applied Physics 100 (6), 063514, 2006 | 52 | 2006 |
| Electronic and transport properties of silicon nanowires F Sacconi, MP Persson, M Povolotskyi, L Latessa, A Pecchia, A Gagliardi, ... Journal of Computational Electronics 6, 329-333, 2007 | 44 | 2007 |
| Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ... Physical Review B 71 (24), 245316, 2005 | 41 | 2005 |
| Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ... Physical Review B 71 (24), 245316, 2005 | 41 | 2005 |
| TiberCAD: Towards multiscale simulation of optoelectronic devices M Auf der Maur, M Povolotskyi, F Sacconi, A Pecchia, G Romano, ... Optical and quantum electronics 40, 1077-1083, 2008 | 40 | 2008 |
| Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping Y Tan, M Povolotskyi, T Kubis, Y He, Z Jiang, G Klimeck, TB Boykin Journal of Computational Electronics 12, 56-60, 2013 | 39 | 2013 |
| Design principles for HgTe based topological insulator devices P Sengupta, T Kubis, Y Tan, M Povolotskyi, G Klimeck Journal of Applied Physics 114 (4), 043702, 2013 | 37 | 2013 |
| Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed-L Valleys SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ... IEEE electron device letters 34 (9), 1196-1198, 2013 | 36 | 2013 |
| Enhanced valence force field model for the lattice properties of gallium arsenide S Steiger, M Salmani-Jelodar, D Areshkin, A Paul, T Kubis, M Povolotskyi, ... Physical Review B 84 (15), 155204, 2011 | 36 | 2011 |
| Incoherent transport in NEMO5: realistic and efficient scattering on phonons J Charles, P Sarangapani, R Golizadeh-Mojarad, R Andrawis, D Lemus, ... Journal of Computational Electronics 15, 1123-1129, 2016 | 31 | 2016 |
| Grain-boundary resistance in copper interconnects: from an atomistic model to a neural network D Valencia, E Wilson, Z Jiang, GA Valencia-Zapata, KC Wang, G Klimeck, ... Physical review applied 9 (4), 044005, 2018 | 30 | 2018 |
| High-Current Tunneling FETs With ( 1\bar {1}0 ) Orientation and a Channel Heterojunction GKMJWR P. Long, J. Z. Huang, M. Povolotskyi IEEE Electron Device Letters 37 (3), 345-348, 2016 | 29 | 2016 |
| Control of interlayer physics in 2H transition metal dichalcogenides KC Wang, TK Stanev, D Valencia, J Charles, A Henning, VK Sangwan, ... Journal of Applied Physics 122 (22), 224302, 2017 | 26 | 2017 |
| Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs P Long, E Wilson, J Huang, G Klimeck, M Rodwell, M Povolotskyi IEEE Electron Device Letters 37 (1), 107-110, 2016 | 26 | 2016 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
