Sashikanth Majety
Sashikanth Majety
Engineering Technology Development Manager, Intel Corporation
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang
Applied physics letters 98 (21), 211110, 2011
1492011
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang
Applied physics letters 101 (17), 171112, 2012
902012
Hexagonal boron nitride epitaxial layers as neutron detector materials
J Li, R Dahal, S Majety, JY Lin, HX Jiang
Nuclear instruments and methods in physics research section a: accelerators …, 2011
862011
Epitaxial growth and demonstration of hexagonal BN/AlGaN pn junctions for deep ultraviolet photonics
S Majety, J Li, XK Cao, R Dahal, BN Pantha, JY Lin, HX Jiang
Applied Physics Letters 100 (6), 061121, 2012
852012
Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers
TC Doan, S Majety, S Grenadier, J Li, JY Lin, HX Jiang
Nuclear instruments and methods in physics research section a: accelerators …, 2014
472014
Band-edge transitions in hexagonal boron nitride epilayers
S Majety, XK Cao, J Li, R Dahal, JY Lin, HX Jiang
Applied physics letters 101 (5), 051110, 2012
452012
Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products
TC Doan, S Majety, S Grenadier, J Li, JY Lin, HX Jiang
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015
372015
Hexagonal boron nitride and 6H-SiC heterostructures
S Majety, J Li, WP Zhao, B Huang, SH Wei, JY Lin, HX Jiang
Applied Physics Letters 102 (21), 213505, 2013
282013
Electrical transport properties of Si-doped hexagonal boron nitride epilayers
S Majety, TC Doan, J Li, JY Lin, HX Jiang
AIP Advances 3 (12), 122116, 2013
272013
Layer-structured hexagonal (BN) C semiconductor alloys with tunable optical and electrical properties
MR Uddin, S Majety, J Li, JY Lin, HX Jiang
Journal of Applied Physics 115 (9), 093509, 2014
242014
Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
H Jiang, S Majety, R Dahal, J Li, J Lin
US Patent App. 13/464,977, 2013
142013
Semiconducting hexagonal boron nitride for deep ultraviolet photonics
S Majety, XK Cao, R Dahal, BN Pantha, J Li, JY Lin, HX Jiang
Quantum Sensing and Nanophotonic Devices IX 8268, 82682R, 2012
92012
Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers
S Majety, J Li, XK Cao, R Dahal, JY Lin, HX Jiang
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV 8507, 85070R, 2012
82012
Optoelectronic properties of hexagonal boron nitride epilayers
XK Cao, S Majety, J Li, JY Lin, HX Jiang
Quantum Sensing and Nanophotonic Devices X 8631, 863128, 2013
32013
Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
H Jiang, S Majety, R Dahal, J Li, J Lin
US Patent 9,093,581, 2015
12015
Charge Carrier Transport Properties in Layered Structure of Hexagonal Boron Nitride (-BN) and Thermal Neutron Detection Based on -BN
T Doan, S Grenadier, S Majety, J Li, J Lin, H Jiang
Bulletin of the American Physical Society 60, 2015
2015
Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
S Majety
2014
MOCVD grown hexagonal BN epilayers for DUV photonics
S Majety, J Li, J Lin, H Jiang
APS 2013, Z21. 014, 2013
2013
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
HX Jiang, JY Lin, BN Pantha, XK Cao, S Majety, J Li, R Dahal
American Institute of Physics, 2011
2011
Structural and Optical properties of Si-doped AlN
S Majety, B Pantha, A Sedhain, J Li, H Jiang, J Lin
APS 2011, A12. 007, 2011
2011
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Articles 1–20