| Vibrational and electrical properties of hexagonal La2O3 films G Scarel, A Debernardi, D Tsoutsou, S Spiga, SC Capelli, L Lamagna, ... Applied Physics Letters 91 (10), 102901, 2007 | 74 | 2007 |
| Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks P Tsipas, SN Volkos, A Sotiropoulos, SF Galata, G Mavrou, D Tsoutsou, ... Applied Physics Letters 93 (8), 2008 | 71 | 2008 |
| Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, ... Microelectronic Engineering 85 (12), 2411-2413, 2008 | 55 | 2008 |
| Atomic layer deposition of LaxZr1− xO2− δ (x= 0.25) high-k dielectrics for advanced gate stacks D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, ... Applied Physics Letters 94 (5), 2009 | 41 | 2009 |
| O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates L Lamagna, C Wiemer, M Perego, SN Volkos, S Baldovino, D Tsoutsou, ... Journal of Applied Physics 108 (8), 084108, 2010 | 40 | 2010 |
| Chemical/Structural nanocharacterization and electrical properties of ALD-Grown La2O3∕ Si interfaces for advanced gate stacks S Schamm, PE Coulon, S Miao, SN Volkos, LH Lu, L Lamagna, C Wiemer, ... Journal of The Electrochemical Society 156 (1), H1, 2008 | 38 | 2008 |
| The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors SN Volkos, ES Efthymiou, S Bernardini, ID Hawkins, AR Peaker, G Petkos Journal of Applied Physics 100 (12), 124103, 2006 | 27 | 2006 |
| Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment E Efthymiou, S Bernardini, JF Zhang, SN Volkos, B Hamilton, AR Peaker Thin Solid Films 517 (1), 207-208, 2008 | 19 | 2008 |
| Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks E Efthymiou, S Bernardini, SN Volkos, B Hamilton, JF Zhang, HJ Uppal, ... Microelectronic engineering 84 (9-10), 2290-2293, 2007 | 18 | 2007 |
| Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer XL Li, D Tsoutsou, G Scarel, C Wiemer, SC Capelli, SN Volkos, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (2 …, 2009 | 15 | 2009 |
| Nanoscale electrical characterization of ultrathin high-k dielectric MOS stacks: A conducting AFM study HJ Uppal, S Bernardini, E Efthymiou, SN Volkos, A Dimoulas, ... Materials science in semiconductor processing 11 (5-6), 250-253, 2008 | 4 | 2008 |
| Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: A nanoscale conductive-Atomic Force Microscopy C-AFM HJ Uppal, V Markevich, SN Volkos, A Dimoulas, B Hamilton, AR Peaker MRS Online Proceedings Library Archive 1108, 2008 | 1 | 2008 |
| Extrinsic stacking fault generation related to high–k dielectric growth on a Si substrate SN Volkos, S Bernardini, N Rigopoulos, ES Efthymiou, ID Hawkins, ... Microelectronic engineering 84 (9-10), 2374-2377, 2007 | | 2007 |
