Silicon nanowires based resistors as gas sensors F Demami, L Ni, R Rogel, AC Salaun, L Pichon
Sensors and Actuators B: Chemical 170, 158-162, 2012
78 2012 Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor G Wenga, E Jacques, AC Salaün, R Rogel, L Pichon, F Geneste
Biosensors and Bioelectronics 40 (1), 141-146, 2013
59 2013 Analysis of the activation energy of the subthreshold current in laser-and solid-phase-crystallized polycrystalline silicon thin-film transistors L Pichon, A Mercha, R Carin, O Bonnaud, T Mohammed-Brahim, Y Helen, ...
Applied Physics Letters 77 (4), 576-578, 2000
44 2000 Growth-in-place deployment of in-plane silicon nanowires L Yu, W Chen, B O’Donnell, G Patriarche, S Bouchoule, P Pareige, ...
Applied Physics Letters 99 (20), 2011
43 2011 Performance of thin film transistors on unhydrogenated in-situ doped polysilicon films obtained by solid phase crystallization K Mourgues, F Raoult, L Pichon, T Mohammed-Brahim, D Briand, ...
MRS Online Proceedings Library (OPL) 471, 155, 1997
39 1997 Determination of interface state distribution in polysilicon thin film transistors from low-frequency noise measurements: Application to analysis of electrical properties L Pichon, A Boukhenoufa, C Cordier, B Cretu
Journal of applied physics 100 (5), 2006
31 2006 Silicon nanowires synthesis for chemical sensor applications F Demami, L Ni, R Rogel, AC Salaun, L Pichon
Procedia Engineering 5, 351-354, 2010
30 2010 New approaches for investigating paintings by ion beam techniques L Beck, L de Viguerie, P Walter, L Pichon, PC Gutiérrez, J Salomon, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2010
29 2010 Low temperature (≦ 600° C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays L Pichon, F Raoult, K Mourgues, K Kis-Sion, T Mohammed-Brahim, ...
Thin Solid Films 296 (1-2), 133-136, 1997
28 1997 Fabrication of polycrystalline silicon nanowires using conventional UV lithography F Demami, L Pichon, R Rogel, AC Salaün
IOP Conference Series: Materials Science and Engineering 6 (1), 012014, 2009
26 2009 Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization L Pichon, K Mourgues, F Raoult, T Mohammed-Brahim, K Kis-Sion, ...
Semiconductor science and technology 16 (11), 918, 2001
26 2001 Current crowding and A Mercha, LKJ Vandamme, L Pichon, R Carin, O Bonnaud
Journal of Applied Physics 90 (8), 4019-4026, 2001
25 2001 Bacteria electrical detection using 3D silicon nanowires based resistor B Le Borgne, L Pichon, AC Salaun, B Le Bihan, A Jolivet-Gougeon, ...
Sensors and Actuators B: Chemical 273, 1794-1799, 2018
23 2018 Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process D Briand, M Sarret, F Le Bihan, O Bonnaud, L Pichon
Materials science and technology 11 (11), 1207-1209, 1995
23 1995 Characterization of gold leaves on Greek terracotta figurines: A PIXE-RBS study C Fourdrin, SP Camagna, C Pacheco, M Radepont, Q Lemasson, ...
Microchemical Journal 126, 446-453, 2016
21 2016 VLS silicon nanowires based resistors for chemical sensor applications L Ni, E Jacques, R Rogel, AC Salaün, L Pichon, G Wenga
Procedia Engineering 47, 240-243, 2012
21 2012 Raman spectrum of Si nanowires: temperature and phonon confinement effects J Anaya, A Torres, V Hortelano, J Jiménez, AC Prieto, A Rodríguez, ...
Applied Physics A 114, 1321-1331, 2014
20 2014 Fabrication and properties of low-temperature (⩽600 °C) processed S Kerdiles, A Berthelot, R Rizk, L Pichon
Applied physics letters 80 (20), 3772-3774, 2002
20 2002 Conduction behaviour of low-temperature (≤ 600° C) polysilicon TFTs with an in situ drain doping level L Pichon, F Raoult, O Bonnaud, H Sehil, D Briand
Solid-state electronics 38 (8), 1515-1521, 1995
20 1995 Variable range hopping conduction in N-and P-type in situ doped polycrystalline silicon nanowires L Pichon, E Jacques, R Rogel, AC Salaun, F Demami
Semiconductor science and technology 28 (2), 025002, 2012
17 2012 
Anne-Claire SalaunUniversité de Rennes1 FranceGeverifieerd e-mailadres voor univ-rennes1.fr
