Jason Roussos
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Trapping effects and microwave power performance in AlGaN/GaN HEMTs
SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ...
IEEE Transactions on Electron Devices 48 (3), 465-471, 2001
Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/plasma treatment prior to SiN passivation
AP Edwards, JA Mittereder, SC Binari, DS Katzer, DF Storm, JA Roussos
IEEE electron device letters 26 (4), 225-227, 2005
Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress
JA Mittereder, SC Binari, PB Klein, JA Roussos, DS Katzer, DF Storm, ...
Applied physics letters 83 (8), 1650-1652, 2003
Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates
KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ...
IEEE electron device letters 31 (2), 99-101, 2009
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
Ion induced charge collection in GaAs MESFETs
A Campbell, A Knudson, D McMorrow, W Anderson, J Roussos, S Espy, ...
IEEE Transactions on Nuclear Science 36 (6), 2292-2299, 1989
Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
DF Storm, DS Katzer, SC Binari, ER Glaser, BV Shanabrook, JA Roussos
Applied physics letters 81 (20), 3819-3821, 2002
/InAlN/AlN/GaN MIS-HEMTs With 10.8 Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
IEEE electron device letters 35 (5), 527-529, 2014
Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
DS Katzer, DF Storm, SC Binari, JA Roussos, BV Shanabrook, ER Glaser
Journal of crystal growth 251 (1-4), 481-486, 2003
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization
DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ...
Journal of crystal growth 301, 429-433, 2007
MBE growth of AlGaN/GaN HEMTs with high power density
DS Katzer, SC Binari, DF Storm, JA Roussos, BV Shanabrook, ER Glaser
Electronics Letters 38 (25), 1740-1741, 2002
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
AlN/GaN insulated gate HEMTs with HfO2 gate dielectric
DA Deen, SC Binari, DF Storm, DS Katzer, JA Roussos, JC Hackley, ...
Electronics letters 45 (8), 423-424, 2009
Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates
DF Storm, JA Roussos, DS Katzer, JA Mittereder, R Bass, SC Binari, ...
Electronics Letters 42 (11), 663-665, 2006
Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates
DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ...
Journal of crystal growth 305 (2), 340-345, 2007
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
DF Storm, DS Katzer, DA Deen, R Bass, DJ Meyer, JA Roussos, SC Binari, ...
Solid-state electronics 54 (11), 1470-1473, 2010
Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy
PB Klein, JA Mittereder, SC Binari, JA Roussos, DS Katzer, DF Storm
Electronics Letters 39 (18), 1354-1356, 2003
Heavy ion total fluence effects in GaAs devices
WT Anderson, AR Knudson, A Meulenberg, HL Hung, JA Roussos, ...
IEEE Transactions on nuclear science 37 (6), 2065-2070, 1990
Quantitative measurement of channel temperature of GaAs devices for reliable life-time prediction
JA Mittereder, JA Roussos, WT Anderson, DE Ioannou
IEEE Transactions on Reliability 51 (4), 482-485, 2002
X-band power and linearity performance of compositionally graded AlGaN channel transistors
SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ...
IEEE Electron Device Letters 39 (12), 1884-1887, 2018
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