Ingrid Koslow
Ingrid Koslow
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30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique
Y Zhao, J Sonoda, CC Pan, S Brinkley, I Koslow, K Fujito, H Ohta, ...
Applied physics express 3 (10), 102101, 2010
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
H Masui, J Sonoda, N Pfaff, I Koslow, S Nakamura, SP DenBaars
Journal of Physics D: Applied Physics 41 (16), 165105, 2008
444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ...
Applied Physics Letters 100 (2), 2012
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ...
Applied Physics Letters 101 (12), 2012
Trace analysis of non-basal plane misfit stress relaxation in (202¯ 1) and (303¯ 1¯) semipolar InGaN/GaN heterostructures
MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ...
Applied Physics Letters 100 (20), 2012
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
F Wu, EC Young, I Koslow, MT Hardy, PS Hsu, AE Romanov, S Nakamura, ...
Applied Physics Letters 99 (25), 2011
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1− x N/GaN quantum wells
C Mounir, UT Schwarz, IL Koslow, M Kneissl, T Wernicke, T Schimpke, ...
Physical Review B 93 (23), 235314, 2016
Electroluminescence characterization of (2021) InGaN/GaN light emitting diodes with various wavelengths
RB Chung, YD Lin, I Koslow, N Pfaff, H Ohta, J Ha, SP DenBaars, ...
Japanese Journal of Applied Physics 49 (7R), 070203, 2010
Impact of electron irradiation on electron holographic potentiometry
JB Park, T Niermann, D Berger, A Knauer, I Koslow, M Weyers, M Kneissl, ...
Applied Physics Letters 105 (9), 2014
Droop improvement in high current range on PSS-LEDs
S Tanaka, Y Zhao, I Koslow, CC Pan, HT Chen, J Sonoda, SP DenBaars, ...
Electronics letters 47 (5), 335-336, 2011
High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
DB Thompson, JJ Richardson, I Koslow, JS Ha, FF Lange, SP DenBaars, ...
US Patent 8,637,334, 2014
Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
JJ Richardson, DB Thompson, I Koslow, JS Ha, FF Lange, SP DenBaars, ...
US Patent 8,536,618, 2013
Optimization of device structures for bright blue semipolar (1011) light emitting diodes via metalorganic chemical vapor deposition
Y Zhao, J Sonada, I Koslow, CC Pan, H Ohta, JS Ha, SP DenBaars, ...
Japanese Journal of Applied Physics 49 (7R), 070206, 2010
Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes
CC Pan, I Koslow, J Sonoda, H Ohta, JS Ha, S Nakamura, SP DenBaars
Japanese journal of applied physics 49 (8R), 080210, 2010
High power and high efficiency blue InGaN Light emitting diodes on free-standing semipolar (3031) bulk GaN substrate
IL Koslow, J Sonoda, RB Chung, CC Pan, S Brinkley, H Ohta, ...
Japanese journal of applied physics 49 (8R), 080203, 2010
Preparation and structure of ultra-thin GaN (0001) layers on In0. 11Ga0. 89N-single quantum wells
S Alamé, AN Quezada, D Skuridina, C Reich, D Henning, M Frentrup, ...
Materials Science in Semiconductor Processing 55, 7-11, 2016
Onset of plastic relaxation in semipolar (112¯ 2) InxGa1− xN/GaN heterostructures
IL Koslow, MT Hardy, PS Hsu, F Wu, AE Romanov, EC Young, ...
Journal of Crystal Growth 388, 48-53, 2014
Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements
M Rychetsky, I Koslow, B Avinc, J Rass, T Wernicke, K Bellmann, ...
Journal of Applied Physics 119 (9), 2016
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯ 1) InGaN/GaN heterostructures
MT Hardy, EC Young, P Shan Hsu, DA Haeger, IL Koslow, S Nakamura, ...
Applied Physics Letters 101 (13), 2012
Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes
JJ Richardson, I Koslow, CC Pan, Y Zhao, JS Ha, SP DenBaars
Applied Physics Express 4 (12), 126502, 2011
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