| Electrochemical properties of anatase TiO2 nanotubes as an anode material for lithium-ion batteries J Xu, C Jia, B Cao, WF Zhang Electrochimica acta 52 (28), 8044-8047, 2007 | 327 | 2007 |
| Strong correlations and orbital texture in single-layer 1T-TaSe2 Y Chen, W Ruan, M Wu, S Tang, H Ryu, HZ Tsai, RL Lee, S Kahn, F Liou, ... Nature Physics 16 (2), 218-224, 2020 | 160 | 2020 |
| Persistent Charge-Density-Wave Order in Single-Layer TaSe2 H Ryu, Y Chen, H Kim, HZ Tsai, S Tang, J Jiang, F Liou, S Kahn, C Jia, ... Nano letters 18 (2), 689-694, 2018 | 134 | 2018 |
| Evidence for quantum spin liquid behaviour in single-layer 1T-TaSe2 from scanning tunnelling microscopy W Ruan, Y Chen, S Tang, J Hwang, HZ Tsai, RL Lee, M Wu, H Ryu, ... Nature Physics 17 (10), 1154-1161, 2021 | 94 | 2021 |
| Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3: Nb/ZnO heterojunctions CH Jia, XW Sun, GQ Li, YH Chen, WF Zhang Applied Physics Letters 104 (4), 2014 | 66 | 2014 |
| Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films C Jia, Y Chen, WF Zhang Journal of Applied Physics 105 (11), 2009 | 52 | 2009 |
| Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb: SrTiO3 interface J Sun, CH Jia, GQ Li, WF Zhang Applied Physics Letters 101 (13), 2012 | 51 | 2012 |
| Analysis of the electrical characteristics of the Ag/ZnO Schottky barrier diodes on F-doped SnO2 glass substrates by pulsed laser deposition X Zhang, F Hai, T Zhang, C Jia, X Sun, L Ding, W Zhang Microelectronic Engineering 93, 5-9, 2012 | 50 | 2012 |
| Ferroelectric memristive effect in BaTiO3 epitaxial thin films X Chen, CH Jia, YH Chen, G Yang, WF Zhang Journal of Physics D: Applied Physics 47 (36), 365102, 2014 | 44 | 2014 |
| Negative differential resistance and resistance switching behaviors in BaTiO3 thin films G Yang, CH Jia, YH Chen, X Chen, WF Zhang Journal of Applied Physics 115 (20), 2014 | 44 | 2014 |
| Effect of incorporating copper on resistive switching properties of ZnO films CH Jia, QC Dong, WF Zhang Journal of alloys and compounds 520, 250-254, 2012 | 33 | 2012 |
| Factors impacted on anisotropic photocatalytic oxidization activity of ZnO: Surface band bending, surface free energy and surface conductance G Li, Z Yi, H Wang, C Jia, W Zhang Applied Catalysis B: Environmental 158, 280-285, 2014 | 30 | 2014 |
| Growth of c-oriented ZnO films on (0 0 1) SrTiO3 substrates by MOCVD C Jia, Y Chen, G Liu, X Liu, S Yang, Z Wang Journal of Crystal Growth 311 (1), 200-204, 2008 | 28 | 2008 |
| Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy C Jia, Y Chen, Y Guo, X Liu, S Yang, W Zhang, Z Wang Nanoscale research letters 6, 1-5, 2011 | 27 | 2011 |
| High-performance ferroelectric non-volatile memory based on La-doped BiFeO 3 thin films W Dai, Y Li, C Jia, C Kang, M Li, W Zhang RSC advances 10 (31), 18039-18043, 2020 | 24 | 2020 |
| Surface coordination modification and electrical properties of few-layer black phosphorus exfoliated by the liquid-phase method C Jia, L Zhao, M Cui, F Yang, G Cheng, G Yang, Z Zeng Journal of Alloys and Compounds 799, 99-107, 2019 | 24 | 2019 |
| Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy CH Jia, YH Chen, XL Zhou, AL Yang, GL Zheng, XL Liu, SY Yang, ... Applied Physics A 99, 511-514, 2010 | 24 | 2010 |
| Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions C Jia, J Li, G Yang, Y Chen, W Zhang Nanoscale research letters 13, 1-6, 2018 | 22 | 2018 |
| Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition G Zheng, A Yang, H Wei, X Liu, H Song, Y Guo, C Jia, C Jiao, S Yang, ... Applied surface science 256 (8), 2606-2610, 2010 | 22 | 2010 |
| Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD CH Jia, YH Chen, GH Liu, XL Liu, SY Yang, ZG Wang Journal of Physics D: Applied Physics 42 (1), 015415, 2008 | 21 | 2008 |
