Sansaptak Dasgupta
Sansaptak Dasgupta
Hardware Engineer, Apple
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N-polar GaN epitaxy and high electron mobility transistors
Man Hoi Wong, Stacia Keller, Nidhi, Sansaptak Dasgupta, Daniel J Denninghoff ...
Semiconductor Science and Technology 28 (7), 074009, 2013
Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth
S Dasgupta, Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra
Applied physics letters 96 (14), 143504, 2010
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact…
HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
Trench confined epitaxially grown device layer (s)
R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ...
US Patent 8,765,563, 2014
Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors
SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck
Applied physics express 4 (2), 024101, 2011
AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit
A Raman, S Dasgupta, S Rajan, JS Speck, UK Mishra
Japanese Journal of Applied Physics 47 (5R), 3359, 2008
Growth of high quality N-polar on Si(111) by plasma assisted molecular beam epitaxy
S Dasgupta, F Wu, JS Speck, UK Mishra
Applied Physics Letters 94 (15), 151906, 2009
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High
DJ Denninghoff, S Dasgupta, J Lu, S Keller, UK Mishra
IEEE electron device letters 33 (6), 785-787, 2012
Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth
U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ...
IEEE Electron Device Letters 32 (2), 137-139, 2010
Nonplanar III-N transistors with compositionally graded semiconductor channels
HW Then, S Dasgupta, M Radosavljevic, B Chu-Kung, SH Sung, ...
US Patent 8,896,101, 2014
Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate
HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 28.3.1 - 28.3.4, 2013
Epitaxial buffer layers for group III-N transistors on silicon substrates
S Dasgupta, HW Then, N Mukherjee, M Radosavljevic, RS Chau
US Patent 9,583,574, 2017
Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy
S Dasgupta, N Choi, F Wu, JS Speck, UK Mishra
Applied physics express 4 (4), 045502, 2011
Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm
S Dasgupta, J Lu, JS Speck, UK Mishra
IEEE Electron Device Letters 33 (6), 794-796, 2012
III-N devices in Si trenches
S Dasgupta, HW Then, SK Gardner, SH Sung, M Radosavljevic, ...
US Patent 9,640,422, 2017
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs Withof 275 GHz
S Dasgupta, J Lu, JS Speck, UK Mishra
IEEE electron device letters 33 (7), 961-963, 2012
Experimental demonstration of III-nitride hot-electron transistor with GaN base
S Dasgupta, A Raman, JS Speck, UK Mishra
IEEE Electron Device Letters 32 (9), 1212-1214, 2011
High breakdown voltage III-N depletion mode MOS capacitors
HW Then, S Dasgupta, G Schrom, VR Rao, RS Chau
US Patent 9,064,709, 2015
Epitaxial film on nanoscale structure
B Chu-King, V Le, R Chau, S Dasgupta, G Dewey, N Goel, J Kavalieros, ...
US Patent 9,029,835, 2015
fT and fMAX of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT
S Dasgupta, Y Pei, BL Swenson, DF Brown, S Keller, JS Speck, ...
Electron Device Letters, IEEE 30 (6), 599-601, 2009
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