Dheeraj Mohata
Dheeraj Mohata
Senior Integration Engineer, GCS Inc
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Temperature-DependentCharacteristics of a VerticalTunnel FET
S Mookerjea, D Mohata, T Mayer, V Narayanan, S Datta
IEEE Electron Device Letters 31 (6), 564-566, 2010
Scaling length theory of double-gate interband tunnel field-effect transistors
L Liu, D Mohata, S Datta
IEEE Transactions on Electron Devices 59 (4), 902-908, 2012
Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and …
S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ...
2009 IEEE international electron devices meeting (IEDM), 1-3, 2009
Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications
DK Mohata, R Bijesh, S Mujumdar, C Eaton, R Engel-Herbert, T Mayer, ...
2011 International Electron Devices Meeting, 33.5. 1-33.5. 4, 2011
Experimental staggered-source and N+ pocket-doped channel III–V tunnel field-effect transistors and their scalabilities
D Mohata, S Mookerjea, A Agrawal, Y Li, T Mayer, V Narayanan, A Liu, ...
Applied physics express 4 (2), 024105, 2011
Barrier-engineered arsenide–antimonide heterojunction tunnel FETs with enhanced drive current
D Mohata, B Rajamohanan, T Mayer, M Hudait, J Fastenau, D Lubyshev, ...
IEEE Electron Device Letters 33 (11), 1568-1570, 2012
Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio
DK Mohata, R Bijesh, Y Zhu, MK Hudait, R Southwick, Z Chbili, ...
2012 Symposium on VLSI technology (VLSIT), 53-54, 2012
Demonstration of In 0.9 Ga 0.1 As/GaAs 0.18 Sb 0.82 near broken-gap tunnel FET with I ON= 740μA/μm, G M= 70μS/μm and gigahertz switching performance at V Ds= 0.5 V
R Bijesh, H Liu, H Madan, D Mohata, W Li, NV Nguyen, D Gundlach, ...
2013 IEEE International Electron Devices Meeting, 28.2. 1-28.2. 4, 2013
Insight into the output characteristics of III-V tunneling field effect transistors
B Rajamohanan, D Mohata, A Ali, S Datta
Applied Physics Letters 102 (9), 092105, 2013
Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ...
Journal of Applied Physics 112 (2), 024306, 2012
Tunnel transistors for energy efficient computing
S Datta, R Bijesh, H Liu, D Mohata, V Narayanan
2013 IEEE International Reliability Physics Symposium (IRPS), 6A. 3.1-6A. 3.7, 2013
Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ...
Journal of Applied Physics 112 (9), 094312, 2012
Reliability studies on high-temperature operation of mixed As/Sb staggered gap tunnel FET material and devices
Y Zhu, DK Mohata, S Datta, MK Hudait
IEEE transactions on device and materials reliability 14 (1), 245-254, 2013
Flicker noise characterization and analytical modeling of homo and hetero-junction III–V tunnel FETs
R Bijesh, DK Mohata, H Liu, S Datta
70th Device Research Conference, 203-204, 2012
Tunnel transistors for low power logic
S Datta, R Bijesh, H Liu, D Mohata, V Narayanan
2013 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2013
Exploration of vertical MOSFET and tunnel FET device architecture for sub 10nm node applications
H Liu, DK Mohata, A Nidhi, V Saripalli, V Narayanan, S Datta
70th Device Research Conference, 233-234, 2012
Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing
WS Cho, M Luisier, D Mohata, S Datta, D Pawlik, SL Rommel, G Klimeck
Applied Physics Letters 100 (6), 063504, 2012
Self-aligned gate nanopillar In0.53Ga0.47As vertical tunnel transistor
DK Mohata, R Bijesh, V Saripalli, T Mayer, S Datta
69th Device Research Conference, 203-204, 2011
Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ...
Journal of Applied Physics 113 (2), 024319, 2013
Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
B Rajamohanan, D Mohata, Y Zhu, M Hudait, Z Jiang, M Hollander, ...
Journal of Applied Physics 115 (4), 044502, 2014
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