C. Claeys
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Germanium-based technologies: from materials to devices
C Claeys, E Simoen
elsevier, 2011
Radiation effects in advanced semiconductor materials and devices
C Claeys, E Simoen
Springer Science & Business Media, 2002
Silicon-on-insulator'gate-all-around device'
JP Colinge, MH Gao, A Romano-Rodriguez, H Maes, C Claeys
International Technical Digest on Electron Devices, 595-598, 1990
On the flicker noise in submicron silicon MOSFETs
E Simoen, C Claeys
Solid-State Electronics 43 (5), 865-882, 1999
A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon
J Vanhellemont, C Claeys
Journal of applied physics 62 (9), 3960-3967, 1987
Low temperature electronics: physics, devices, circuits, and applications
EA Gutierrez-D, J Deen, C Claeys
Elsevier, 2000
Explaining the amplitude of RTS noise in submicrometer MOSFETs
E Simoen, B Dierickx, CL Claeys, GJ Declerck
IEEE Transactions on Electron Devices 39 (2), 422-429, 1992
A foveated retina-like sensor using CCD technology
J Van der Spiegel, G Kreider, C Claeys, I Debusschere, G Sandini, ...
Analog VLSI implementation of neural systems, 189-211, 1989
" Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs
A Mercha, JM Rafi, E Simoen, E Augendre, C Claeys
IEEE Transactions on Electron Devices 50 (7), 1675-1682, 2003
Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
E Simoen, A Mercha, L Pantisano, C Claeys, E Young
IEEE transactions on electron devices 51 (5), 780-784, 2004
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
Film‐edge‐induced dislocation generation in silicon substrates. I. Theoretical model
J Vanhellemont, S Amelinckx, C Claeys
Journal of applied physics 61 (6), 2170-2175, 1987
A 1006 element hybrid silicon pixel detector with strobed binary output
F Anghinolfi, P Aspell, K Bass, W Beusch, L Bosisio, C Boutonnet, ...
IEEE transactions on nuclear science 39 (4), 654-661, 1992
Gettering mechanisms in silicon
ML Polignano, GF Cerofolini, H Bender, C Claeys
Journal of applied physics 64 (2), 869-876, 1988
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's
TE Chang, C Huang, T Wang
IEEE Transactions on electron devices 42 (4), 738-743, 1995
Impact of oxygen related extended defects on silicon diode characteristics
J Vanhellemont, E Simoen, A Kaniava, M Libezny, C Claeys
Journal of applied physics 77 (11), 5669-5676, 1995
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions
G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE transactions on electron devices 55 (9), 2287-2296, 2008
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
New technologies for learning: Contribution of ICT to innovation in education
R Dillemans, J Lowyck, G Van derPerre, C Claeys, J Elen
Leuven University Press; Leuven, 1998
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