| Second-order piezoelectricity in wurtzite III-N semiconductors J Pal, G Tse, V Haxha, MA Migliorato, S Tomić Physical Review B 84 (8), 085211, 2011 | 119 | 2011 |
| Under pressure: Control of strain, phonons and bandgap opening in rippled graphene U Monteverde, J Pal, MA Migliorato, M Missous, U Bangert, R Zan, ... Carbon 91, 266-274, 2015 | 65 | 2015 |
| Piezoelectric field enhancement in III–V core–shell nanowires HYS Al-Zahrani, J Pal, MA Migliorato, G Tse, D Yu Nano Energy 14, 382-391, 2015 | 63 | 2015 |
| Non-linear piezoelectricity in wurtzite ZnO semiconductors HYS Al-Zahrani, J Pal, MA Migliorato Nano Energy 2 (6), 1214-1217, 2013 | 52 | 2013 |
| Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors G Tse, J Pal, U Monteverde, R Garg, V Haxha, MA Migliorato, S Tomić Journal of Applied Physics 114 (7), 2013 | 37 | 2013 |
| Non linear piezoelectricity in zincblende GaAs and InAs semiconductors G Tse, J Pal, R Garg, V Haxha, MA Migliorato Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th …, 2012 | 37 | 2012 |
| A review of non linear piezoelectricity in semiconductors MA Migliorato, J Pal, R Garg, G Tse, HYS Al-Zahrani, U Monteverde, ... AIP Conference Proceedings 1590 (1), 32-41, 2014 | 27 | 2014 |
| Importance of non linear piezoelectric effect in Wurtzite III-N semiconductors J Pal, G Tse, V Haxha, MA Migliorato, S Tomić Optical and Quantum Electronics 44, 195-203, 2012 | 24 | 2012 |
| Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management J Pal, MA Migliorato, CK Li, YR Wu, BG Crutchley, IP Marko, SJ Sweeney Journal of Applied Physics 114 (7), 073104-073104-5, 2013 | 23 | 2013 |
| Visible Spectrum Quantum Light Sources Based on InxGa1–xN/GaN Quantum Dots S Tomić, J Pal, MA Migliorato, RJ Young, N Vukmirović ACS Photonics 2 (7), 958-963, 2015 | 22 | 2015 |
| Optical properties of InGaN‐based LEDs investigated using high hydrostatic pressure dependent techniques BG Crutchley, IP Marko, J Pal, MA Migliorato, SJ Sweeney physica status solidi (b) 250 (4), 698-702, 2013 | 14 | 2013 |
| Elastic and vibrational properties of group IV semiconductors in empirical potential modelling U Monteverde, MA Migliorato, J Pal, D Powell Journal of Physics: Condensed Matter 25 (42), 425801, 2013 | 10 | 2013 |
| Polarization in III-N Semiconductors Max Migliorato, Joydeep Pal, Xin Huang, Weiguo Hu, Morten Willatzen, Yousong Gu Handbook of Optoelectronic Device Modeling and Simulation 1, 219-249, 2017 | 3* | 2017 |
| Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors J Pal, G Tse, V Haxha, MA Migliorato, S Tomić Journal of Physics: Conference Series 367 (1), 012006, 2012 | 3 | 2012 |
| Ripples, phonons and bandgap in strained graphene U Monteverde, J Pal, OM Dawood, ZL Li, RJ Young, HY Kim, M Missous, ... 2015 International Conference on Numerical Simulation of Optoelectronic …, 2015 | 1 | 2015 |
| The disruptive potential of graphene in the smart apparel industry J Pal | | 2017 |
| Beyond ZnO nanowires for piezotronics and nanogenerators MA Migliorato, J Pal, U Monteverde, HY Kim, HYS Al-Zahrani, J Sexton, ... 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 743-746, 2015 | | 2015 |
| 4th Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIV) S Tomić, M Probert, M Migliorato, J Pal Journal of Physics: Conference Series 526 (1), 011001, 2014 | | 2014 |
| Investigating the Effect of Non Linear Piezoelectricity on the Excitonic Properties of III-N Semiconductor Quantum Dots J Pal, G Tse, S Tomić, MA Migliorato Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th …, 2011 | | 2011 |
Stanko TomicFInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of SurreyVerified email at salford.ac.uk
