Menglin Zhu [ORCID: 0000-0001-6830-2636]
Menglin Zhu [ORCID: 0000-0001-6830-2636]
Postdoctoral Researcher, MIT
Verified email at
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Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films
Y Cheng, S Yu, M Zhu, J Hwang, F Yang
Physical Review Letters 124 (2), 027202, 2020
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2
IH Kao, R Muzzio, H Zhang, M Zhu, J Gobbo, S Yuan, D Weber, R Rao, ...
Nature Materials 21 (9), 1029-1034, 2022
Anisotropic magnetoresistance and nontrivial spin Hall magnetoresistance in bilayers
Y Cheng, S Yu, AS Ahmed, M Zhu, Y Rao, M Ghazisaeidi, J Hwang, ...
Physical Review B 100 (22), 220408, 2019
Synthesis, Magnetic Properties, and Electronic Structure of Magnetic Topological Insulator MnBi2Se4
T Zhu, AJ Bishop, T Zhou, M Zhu, DJ O’Hara, AA Baker, S Cheng, ...
Nano Letters 21 (12), 5083-5090, 2021
Evidence of the topological Hall effect in Pt/antiferromagnetic insulator bilayers
Y Cheng, S Yu, M Zhu, J Hwang, F Yang
Physical Review Letters 123 (23), 237206, 2019
Interfacial Rashba-effect-induced anisotropy in nonmagnetic-material–ferrimagnetic-insulator bilayers
AJ Lee, AS Ahmed, BA McCullian, S Guo, M Zhu, S Yu, PM Woodward, ...
Physical Review Letters 124 (25), 257202, 2020
Corrosion inhibition of AZ31 Mg alloy by aqueous selenite (SeO32−)
Z Feng, B Hurley, M Zhu, Z Yang, J Hwang, R Buchheit
Journal of The Electrochemical Society 166 (14), C520, 2019
Deep level defects and cation sublattice disorder in ZnGeN2
MS Haseman, MR Karim, D Ramdin, BA Noesges, E Feinberg, ...
Journal of Applied Physics 127 (13), 2020
APL Mater. 8, 031104 (2020)
A Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, MR Karim, ...
Medium-range ordering, structural heterogeneity, and their influence on properties of Zr-Cu-Co-Al metallic glasses
S Im, Y Wang, P Zhao, GH Yoo, Z Chen, G Calderon, MA Gharacheh, ...
Physical Review Materials 5 (11), 115604, 2021
Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction
H Kim, S Lee, J Shin, M Zhu, M Akl, K Lu, NM Han, Y Baek, CS Chang, ...
Nature Nanotechnology 17 (10), 1054-1059, 2022
Atomic scale investigation of chemical heterogeneity in β-(AlxGa1− x) 2O3 films using atom probe tomography
B Mazumder, J Sarker, Y Zhang, JM Johnson, M Zhu, S Rajan, J Hwang
Applied Physics Letters 115 (13), 2019
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition
MR Karim, BHD Jayatunga, M Zhu, RA Lalk, O Licata, B Mazumder, ...
AIP Advances 10 (6), 2020
Tunable topological Hall effects in noncollinear antiferromagnet Mn3Sn/Pt bilayers
Y Cheng, S Yu, M Zhu, J Hwang, F Yang
APL Materials 9 (5), 2021
Low-Pressure Chemical Vapor Deposition of In2O3 Films on Off-Axis c-Sapphire Substrates
MR Karim, Z Feng, JM Johnson, M Zhu, J Hwang, H Zhao
Crystal Growth & Design 19 (3), 1965-1972, 2019
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process
H Kim, Y Liu, K Lu, CS Chang, D Sung, M Akl, K Qiao, KS Kim, BI Park, ...
Nature nanotechnology 18 (5), 464-470, 2023
Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)]
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (8), 2020
Nanometer-Thick Sr2IrO4 Freestanding Films for Flexible Electronics
S Shrestha, M Coile, M Zhu, M Souri, J Kim, R Pandey, JW Brill, J Hwang, ...
ACS Applied Nano Materials 3 (7), 6310-6315, 2020
Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe) 0.94 Ga0. 12N2 with GaN
MR Karim, BA Noesges, BHD Jayatunga, M Zhu, J Hwang, ...
Journal of Physics D: Applied Physics 54 (24), 245102, 2021
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