| Efficient InGaN-based yellow-light-emitting diodes F Jiang, J Zhang, L Xu, J Ding, G Wang, X Wu, X Wang, C Mo, Z Quan, ... Photonics Research 7 (2), 144-148, 2019 | 157 | 2019 |
| Efficient emission of InGaN-based light-emitting diodes: toward orange and red S Zhang, J Zhang, J Gao, X Wang, C Zheng, M Zhang, X Wu, L Xu, J Ding, ... Photonics Research 8 (11), 1671-1675, 2020 | 113 | 2020 |
| Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors WD Hu, XS Chen, F Yin, ZJ Quan, ZH Ye, XN Hu, ZF Li, W Lu Journal of applied physics 105 (10), 2009 | 112 | 2009 |
| Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes Z Quan, L Wang, C Zheng, J Liu, F Jiang Journal of Applied Physics 116 (18), 2014 | 87 | 2014 |
| Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects WD Hu, XS Chen, ZJ Quan, CS Xia, W Lu, PD Ye Journal of applied physics 100 (7), 2006 | 81 | 2006 |
| The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes S Zhou, X Liu, H Yan, Y Gao, H Xu, J Zhao, Z Quan, C Gui, S Liu Scientific reports 8 (1), 11053, 2018 | 77 | 2018 |
| Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model WD Hu, XS Chen, ZJ Quan, XM Zhang, Y Huang, CS Xia, W Lu, PD Ye Journal of Applied Physics 102 (3), 2007 | 64 | 2007 |
| Status of GaN-based green light-emitting diodes JL Liu, JL Zhang, GX Wang, CL Mo, LQ Xu, J Ding, ZJ Quan, XL Wang, ... Chinese Physics B 24 (6), 067804, 2015 | 56 | 2015 |
| Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes X Wu, J Liu, Z Quan, C Xiong, C Zheng, J Zhang, Q Mao, F Jiang Applied Physics Letters 104 (22), 2014 | 50 | 2014 |
| Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode ZJ Quan, ZF Li, WD Hu, ZH Ye, XN Hu, W Lu Journal of Applied Physics 100 (8), 2006 | 44 | 2006 |
| Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including … WD Hu, XS Chen, ZJ Quan, CS Xia, W Lu, HJ Yuan Applied Physics Letters 89 (24), 2006 | 37 | 2006 |
| A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices Z Quan, J Liu, F Fang, G Wang, F Jiang Journal of applied Physics 118 (19), 2015 | 35 | 2015 |
| Effects of carrier degeneracy and conduction band non-parabolicity on the simulation of HgCdTe photovoltaic devices ZJ Quan, GB Chen, LZ Sun, ZH Ye, ZF Li, W Lu Infrared physics & technology 50 (1), 1-8, 2007 | 34 | 2007 |
| Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer X Tao, J Liu, J Zhang, C Mo, L Xu, J Ding, G Wang, X Wang, X Wu, ... Optical Materials Express 8 (5), 1221-1230, 2018 | 33 | 2018 |
| High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate J Zhang, C Xiong, J Liu, Z Quan, L Wang, F Jiang Applied Physics A 114, 1049-1053, 2014 | 31 | 2014 |
| Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study W Hu, X Chen, X Zhou, Z Quan, L Wei Microelectronics journal 37 (7), 613-619, 2006 | 31 | 2006 |
| Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates W Qi, J Zhang, C Mo, X Wang, X Wu, Z Quan, G Wang, S Pan, F Fang, ... Journal of Applied Physics 122 (8), 2017 | 29 | 2017 |
| Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes WD Hu, XS Chen, F Yin, ZH Ye, C Lin, XN Hu, ZJ Quan, ZF Li, W Lu Optical and quantum electronics 40, 1255-1260, 2008 | 27 | 2008 |
| Relaxations and bonding mechanism in with mercury vacancy defect: First-principles study LZ Sun, X Chen, YL Sun, XH Zhou, ZJ Quan, H Duan, W Lu Physical Review B 73 (19), 195206, 2006 | 23 | 2006 |
| Structural and electronic properties of the in situ impurity As Hg in Hg 0.5 Cd 0.5 Te: First-principles study LZ Sun, XS Chen, YL Sun, XH Zhou, ZJ Quan, H Duan, W Lu Physical Review B 71 (19), 193203, 2005 | 22 | 2005 |
