Brian P Downey
Brian P Downey
Verified email at nrl.navy.mil
Title
Cited by
Cited by
Year
GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
542018
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
542013
/InAlN/AlN/GaN MIS-HEMTs With 10.8 Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
IEEE electron device letters 35 (5), 527-529, 2014
442014
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 162104, 2017
342017
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
322016
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
302015
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
272014
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
232016
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates
MT Hardy, DF Storm, N Nepal, DS Katzer, BP Downey, DJ Meyer
Journal of Crystal Growth 425, 119-124, 2015
192015
Current-induced degradation of nickel ohmic contacts to SiC
BP Downey, JR Flemish, BZ Liu, TE Clark, SE Mohney
Journal of electronic materials 38 (4), 563-568, 2009
192009
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
MJ Tadjer, VD Wheeler, BP Downey, ZR Robinson, DJ Meyer, CR Eddy Jr, ...
Solid-State Electronics 136, 30-35, 2017
162017
Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0. 17Al0. 83N/AlN/GaN MIS–HEMTs
BP Downey, DJ Meyer, DS Katzer, TM Marron, M Pan, X Gao
Solid-State Electronics 106, 12-17, 2015
152015
Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN
DF Storm, T McConkie, DS Katzer, BP Downey, MT Hardy, DJ Meyer, ...
Journal of crystal growth 409, 14-17, 2015
152015
Reliability of aluminum-bearing ohmic contacts to SiC under high current density
BP Downey, SE Mohney, TE Clark, JR Flemish
Microelectronics Reliability 50 (12), 1967-1972, 2010
132010
Epitaxial ScAlN Etch-Stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer
IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017
122017
Demonstration of GaN HyperFETs with ALD VO2
A Verma, B Song, D Meyer, B Downey, V Wheeler, HG Xing, D Jena
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
122016
Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy
MT Hardy, DF Storm, BP Downey, DS Katzer, DJ Meyer, TO McConkie, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015
122015
Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication
BP Downey, DJ Meyer, R Bass, DS Katzer, SC Binari
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
122012
Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates
N Nepal, DS Katzer, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 9 (2), 021003, 2016
112016
Numerical study of reduced contact resistance via nanoscale topography at metal/semiconductor interfaces
BP Downey, S Datta, SE Mohney
Semiconductor science and technology 25 (1), 015010, 2009
112009
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Articles 1–20