Brian P Downey
Brian P Downey
Verified email at
Cited by
Cited by
GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
/InAlN/AlN/GaN MIS-HEMTs With 10.8 Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
IEEE electron device letters 35 (5), 527-529, 2014
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ...
Nature communications 11 (1), 2314, 2020
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...
Applied Physics Express 13 (6), 065509, 2020
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer
IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
Compositionally graded III-N HEMTs for improved linearity: A simulation study
MG Ancona, JP Calame, DJ Meyer, S Rajan, BP Downey
IEEE Transactions on Electron Devices 66 (5), 2151-2157, 2019
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
MJ Tadjer, VD Wheeler, BP Downey, ZR Robinson, DJ Meyer, CR Eddy Jr, ...
Solid-State Electronics 136, 30-35, 2017
Molecular beam epitaxy of transition metal nitrides for superconducting device applications
DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ...
physica status solidi (a) 217 (3), 1900675, 2020
Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0. 17Al0. 83N/AlN/GaN MIS–HEMTs
BP Downey, DJ Meyer, DS Katzer, TM Marron, M Pan, X Gao
Solid-State Electronics 106, 12-17, 2015
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ...
Applied Physics Letters 116 (11), 2020
Current-induced degradation of nickel ohmic contacts to SiC
BP Downey, JR Flemish, BZ Liu, TE Clark, SE Mohney
Journal of electronic materials 38, 563-568, 2009
Demonstration of GaN HyperFETs with ALD VO2
A Verma, B Song, D Meyer, B Downey, V Wheeler, HG Xing, D Jena
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates
N Nepal, DS Katzer, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 9 (2), 021003, 2016
The system can't perform the operation now. Try again later.
Articles 1–20