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David L. Kencke
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Year
Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
D Xu, TA Lowrey, DL Kencke
US Patent 6,462,984, 2002
1932002
The impact of thermal boundary resistance in phase-change memory devices
JP Reifenberg, DL Kencke, KE Goodson
IEEE Electron Device Letters 29 (10), 1112-1114, 2008
1492008
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
1422018
Floating body cell with independently-controlled double gates for high density memory
I Ban, UE Avci, U Shah, CE Barns, DL Kencke, P Chang
2006 International Electron Devices Meeting, 1-4, 2006
1362006
Floating body memory cell having gates favoring different conductivity type regions
PLD Chang, UE Avci, DL Kencke, I Ban
US Patent 8,217,435, 2012
1232012
Floating gate transistor having buried strained silicon germanium channel layer
DL Kencke, SK Banerjee
US Patent 6,313,486, 2001
1042001
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ...
US Patent 8,836,056, 2014
782014
Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability
Q Ouyang, XD Chen, S Mudanai, DL Kencke, X Wang, AF Tasch, ...
2000 International Conference on Simulation Semiconductor Processes and …, 2000
662000
Random charge effects for PMOS NBTI in ultra-small gate area devices
M Agostinelli, S Pae, W Yang, C Prasad, D Kencke, S Ramey, E Snyder, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
482005
Substrate-current-induced hot electron (SCIHE) injection: A new convergence scheme for flash memory
CY Hu, DL Kencke, SK Banerjee, R Richart, B Bandyopadhyay, B Moore, ...
Proceedings of International Electron Devices Meeting, 283-286, 1995
481995
Vertical channel floating gate transistor having silicon germanium channel layer
DL Kencke, SK Banerjee
US Patent 6,313,487, 2001
462001
The role of interfaces in damascene phase-change memory
DL Kencke, IV Karpov, BG Johnson, SJ Lee, DC Kau, SJ Hudgens, ...
2007 IEEE International Electron Devices Meeting, 323-326, 2007
422007
Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX
UE Avci, I Ban, DL Kencke, PLD Chang
2008 IEEE International SOI Conference, 29-30, 2008
392008
Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
D Xu, T Lowrey, D Kencke
US Patent App. 10/225,217, 2003
37*2003
Selector for low voltage embedded memory
C Kuo, EV Karpov, BS Doyle, DL Kencke, RS Chau
US Patent 9,543,507, 2017
362017
Band alignments in sidewall strained Si/strained SiGe heterostructures
X Wang, DL Kencke, KC Liu, LF Register, SK Banerjee
Solid-State Electronics 46 (12), 2021-2025, 2002
362002
Challenges for on-chip optical interconnects
KC Cadien, MR Reshotko, BA Block, AM Bowen, DL Kencke, P Davids
Optoelectronic Integration on Silicon II 5730, 133-143, 2005
352005
A novel sidewall strained-Si channel nMOSFET
KC Liu, X Wang, E Quinones, X Chen, XD Chen, D Kencke, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
351999
A scaled floating body cell (FBC) memory with high-k+ metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond
I Ban, UE Avci, DL Kencke, PLD Chang
2008 Symposium on VLSI Technology, 92-93, 2008
332008
Bandgap engineering in deep submicron vertical pMOSFETs
Q Ouyang, XD Chen, S Mudanai, DL Kencke, AF Tasch, SK Banerjee
58th DRC. Device Research Conference. Conference Digest (Cat. No. 00TH8526 …, 2000
322000
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