| Large linewidth reduction in semiconductor lasers based on atom-like gain material T Septon, A Becker, S Gosh, G Shtendel, V Sichkovskyi, F Schnabel, ... Optica 6 (8), 1071-1077, 2019 | 49 | 2019 |
| Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature O Karni, A Capua, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier Optics Express 21 (22), 26786-26796, 2013 | 43 | 2013 |
| Temperature-Insensitive High-Speed Directly Modulated 1.55-Quantum Dot Lasers S Banyoudeh, A Abdollahinia, O Eyal, F Schnabel, V Sichkovskyi, ... IEEE Photonics Technology Letters 28 (21), 2451-2454, 2016 | 41 | 2016 |
| High-gain wavelength-stabilized 1.55 μm InAs/InP (100) based lasers with reduced number of quantum dot active layers VI Sichkovskyi, M Waniczek, JP Reithmaier Applied Physics Letters 102 (22), 2013 | 35 | 2013 |
| Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array A Becker, V Sichkovskyi, M Bjelica, A Rippien, F Schnabel, M Kaiser, ... Applied Physics Letters 110 (18), 2017 | 33 | 2017 |
| Coherent control in a semiconductor optical amplifier operating at room temperature A Capua, O Karni, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier Nature Communications 5 (1), 5025, 2014 | 26 | 2014 |
| Ultraviolet detectors based on ZnO: N thin films with different contact structures A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, ... Acta Physica Polonica A 114 (5), 1123-1129, 2008 | 25 | 2008 |
| Anomalies of magnetic properties of layered crystals InSe containing Mn GV Lashkarev, VV Slynko, ZD Kovalyuk, VI Sichkovskyi, MV Radchenko, ... Materials Science and Engineering: C 27 (5-8), 1052-1055, 2007 | 24 | 2007 |
| Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ... physica status solidi (a) 215 (4), 1700455, 2018 | 15 | 2018 |
| Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures O Eyal, A Willinger, S Banyoudeh, F Schanbel, V Sichkovskyi, ... Optics Express 25 (22), 27262-27269, 2017 | 15 | 2017 |
| Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ... Applied Physics Letters 112 (22), 2018 | 14 | 2018 |
| 1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices S Bauer, V Sichkovskyi, O Eyal, T Septon, A Becker, I Khanonkin, ... IEEE Nanotechnology Magazine 15 (2), 23-36, 2021 | 13 | 2021 |
| Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers S Bauer, V Sichkovskyi, JP Reithmaier Journal of Crystal Growth 491, 20-25, 2018 | 13 | 2018 |
| Diluted ferromagnetic semiconductors as spintronic materials GV Lashkarev, MV Radchenko, VA Karpina, VI Sichkovskyi Low Temperature Physics 33 (2), 165-173, 2007 | 13 | 2007 |
| Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ... Low Temperature Physics 35 (1), 62-70, 2009 | 12 | 2009 |
| Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ... Low Temperature Physics 35 (1), 62-70, 2009 | 12 | 2009 |
| Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots I Khanonkin, AK Mishra, O Karni, V Mikhelashvili, S Banyoudeh, ... AIP Advances 7 (3), 2017 | 11 | 2017 |
| 1.5-um quantum dot laser material with high temperature stability of threshold current density and external differential efficiency S Banyoudeh, A Abdollahinia, V Sichkovskyi, JP Reithmaier Novel In-Plane Semiconductor Lasers XV 9767, 68-74, 2016 | 11 | 2016 |
| Narrow-linewidth 1.5-um quantum dot distributed feedback lasers A Becker, V Sichkovskyi, M Bjelica, O Eyal, P Baum, A Rippien, ... Novel In-Plane Semiconductor Lasers XV 9767, 99-106, 2016 | 11 | 2016 |
| Nanomaterials based on CdS nanoparticles in polyethylene matrix MV Radchenko, GV Lashkarev, VI Sichkovskyi, AA Arshakuni, SP Gubin, ... Inorganic Materials 45, 468-473, 2009 | 11 | 2009 |
