Martin Stutzmann

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Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität MünchenVerified email at wsi.tum.de
Martin EickhoffInstitut für Festkörperphysik, Universität BremenVerified email at ifp.uni-bremen.de
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREAVerified email at icn2.cat
Roman DimitrovFinisarVerified email at finisar.com
Ian D. SharpWalter Schottky Institut and Physik Department, Technische Universität MünchenVerified email at wsi.tum.de
Hartmut WiggersUniversity of Duisburg-EssenVerified email at uni-due.de
James R. ShealyCornell UniversityVerified email at ece.cornell.edu
Josef Gerhard MüllerMunich University of Applied SciencesVerified email at hm.edu
WARREN B JACKSONPrincipal ScientistVerified email at parc.com
Carlos F. O. Graeff FRSC (ORCID:000...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESPVerified email at unesp.br
Nils WeimannUniversity of Duisburg-EssenVerified email at uni-due.de
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der WissenschaftenVerified email at wmi.badw.de
David BiegelsenXerox Palo Alto Research CenterVerified email at parc.com
Martin AlbrechtLeibniz-Institut für KristallzüchtungVerified email at ikz-berlin.de
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityVerified email at cardiff.ac.uk
Manuel CardonaMax Planck InstitutVerified email at fkf.mpg.de
Felix HoehneWalter-Schottky Institut, TU MünchenVerified email at wsi.tum.de
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre DameVerified email at itk.ppke.hu
Gema Martínez CriadoEuropean Synchrotron Radiation FacilityVerified email at esrf.fr

Martin Stutzmann

Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München

Verified email at tum.de - Homepage

Semiconductor Physics


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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3723	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	2126	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1569	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1405	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1121*	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	796	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	734	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	646	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006	582	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	446	1989
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	424	1997
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999	419	1999
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B—Condensed Matter and Materials Physics 83 (8), 081304, 2011	407	2011
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	386	1996
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	366	2003
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	366	1987
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	365	1998
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	321	1990
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	300	1997
Electronic and optical properties of boron-doped nanocrystalline diamond films W Gajewski, P Achatz, OA Williams, K Haenen, E Bustarret, M Stutzmann, ... Physical Review B—Condensed Matter and Materials Physics 79 (4), 045206, 2009	296	2009

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