Martin Stutzmann

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Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität MünchenVerified email at wsi.tum.de
Martin EickhoffInstitut für Festkörperphysik, Universität BremenVerified email at ifp.uni-bremen.de
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREAVerified email at icn2.cat
Roman DimitrovFinisarVerified email at finisar.com
Ian D. SharpWalter Schottky Institut and Physik Department, Technische Universität MünchenVerified email at wsi.tum.de
James R. ShealyCornell UniversityVerified email at ece.cornell.edu
WARREN B JACKSONPrincipal ScientistVerified email at parc.com
Carlos F. O. Graeff (ORCID:0000-0003...Professor Titular do DF-FC, Universidade Estadual Paulista-UNESPVerified email at unesp.br
Nils WeimannUniversity of Duisburg-EssenVerified email at uni-due.de
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der WissenschaftenVerified email at wmi.badw.de
David BiegelsenXerox Palo Alto Research CenterVerified email at parc.com
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityVerified email at cardiff.ac.uk
Sebastian GoennenweinProfessor for Solid State Physics, Technische Universität DresdenVerified email at tu-dresden.de
Martin AlbrechtLeibniz-Institut für KristallzüchtungVerified email at ikz-berlin.de
Manuel CardonaMax Planck InstitutVerified email at fkf.mpg.de
Gema Martínez CriadoInstituto de Ciencia de Materiales de MadridVerified email at csic.es
Felix HoehneWalter-Schottky Institut, TU MünchenVerified email at wsi.tum.de
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre DameVerified email at itk.ppke.hu
Jordi ArbiolICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BISTVerified email at icrea.cat

Martin Stutzmann

Professor für Physik, Walter Schottky Institut, Technische Universität München

Verified email at wsi.tum.de - Homepage

Semiconductor Physics


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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3061	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	1747	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1553	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1185	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1063	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	695	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	633	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	583	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 203107, 2006	533	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	435	1989
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MK Kelly, RP Vaudo, VM Phanse, L Görgens, O Ambacher, M Stutzmann Japanese journal of applied physics 38 (3A), L217, 1999	386	1999
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	367	1997
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	366	1996
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	346	1987
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	336	1998
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	335	2003
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B 83 (8), 081304, 2011	314	2011
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	297	1990
Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann Applied physics letters 68 (7), 970-972, 1996	276	1996
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	269	1997

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